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| 型號(hào)： | NSS35200MR6T1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 35 V, 5 A, Low VCE(sat) PNP Transistor(35V, 5A, 低VCE(sat) PNP晶體管) |
| 中文描述： | 2000 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, MINIATURE, CASE 318G-02, TSOP-6 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 65K |
| 代理商： | NSS35200MR6T1G |
Semiconductor Components Industries, LLC, 2005
June, 2005 Rev. 0
1
Publication Order Number:
NSS35200MR6/D
NSS35200MR6T1G
35 V, 5 A, Low V
CE(sat)
PNP Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors
are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DCDC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
This is a PbFree Device
MAXIMUM RATINGS
(T
A
= 25
°
C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
V
CEO
35
Vdc
Collector-Base Voltage
V
CBO
55
Vdc
Emitter-Base Voltage
V
EBO
5.0
Vdc
Collector Current Continuous
I
C
2.0
Adc
Collector Current Peak
I
CM
5.0
A
Electrostatic Discharge
ESD
HBM Class 3
MM Class C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
COLLECTOR
1, 2, 5, 6
3
BASE
4
EMITTER
35 VOLTS
5.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
100 m
Device
Package
Shipping
ORDERING INFORMATION
NSS35200MR6T1G
TSOP6
(PbFree)
TSOP6
CASE 318G
STYLE 6
3000/Tape & Reel
DEVICE MARKING
4
5
6
3
2
1
VS8
M
VS8 = Specific Device Code
M
= Date Code
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
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