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參數(shù)資料
| 型號(hào)： | NSS40600CF8T1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 40 V, 7.0 A, Low VCE(sat) PNP Transistor(40V, 7.0A, 低VCE(sat) PNP晶體管) |
| 中文描述： | 6000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, MINIATURE, CASE 1206A-03, CHIPFET-8 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 106K |
| 代理商： | NSS40600CF8T1G |
Semiconductor Components Industries, LLC, 2007
March, 2007
Rev. 1
1
Publication Order Number:
NSS40600CF8/D
NSS40600CF8T1G
40 V, 7.0 A, Low V
CE(sat)
PNP Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors
are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC
DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
This is a Pb
Free Device
MAXIMUM RATINGS
(T
A
= 25
°
C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
V
CEO
V
CBO
V
EBO
I
C
I
CM
ESD
40
Vdc
Collector-Base Voltage
40
Vdc
Emitter-Base Voltage
7.0
Vdc
Collector Current
Continuous
6.0
Adc
Collector Current
Peak
7.0
A
Electrostatic Discharge
HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation, T
A
= 25
°
C
Derate above 25
°
C
P
D
(Note 1)
830
6.7
mW
mW/
°
C
Thermal Resistance,
Junction
to
Ambient
R
JA
(Note 1)
150
°
C/W
Total Device Dissipation, T
A
= 25
°
C
Derate above 25
°
C
P
D
(Note 2)
1.4
11.1
W
mW/
°
C
Thermal Resistance,
Junction
to
Ambient
R
JA
(Note 2)
90
°
C/W
Thermal Resistance,
Junction
to
Lead #1
R
JL
(Note 2)
15
°
C/W
Total Device Dissipation
(Single Pulse < 10 sec)
P
Dsingle
(Notes 2 & 3)
2.75
W
Junction and Storage
Temperature Range
T
J
, T
stg
55 to
+150
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR
4 @ 100 mm
2
, 1 oz copper traces.
2. FR
4 @ 500 mm
2
, 1 oz copper traces.
3. Thermal response.
COLLECTOR
1, 2, 3, 6, 7, 8
4
BASE
5
EMITTER
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
ChipFET
CASE 1206A
STYLE 4
MARKING DIAGRAM
C
C
C
B
C
C
C
E
PIN CONNECTIONS
5
6
7
8
1
2
3
4
VA = Specific Device Code
M = Month Code
= Pb
Free Package
NSS40600CF8T1G
ChipFET
(Pb
Free)
3000/
Tape & Reel
40 VOLTS, 7.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
45 m
VA M
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NSS40600CF8T1G_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:40 V, 7.0 A, Low VCE(sat) PNP Transistor |
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