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參數(shù)資料
| 型號(hào)： | NSTB60BDW1T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | PNP General Purpose and NPN Bias Resistor Transistor Combination(PNP通用與NPN偏置電阻晶體管組合) |
| 中文描述： | 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 419B-02, 6 PIN |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 83K |
| 代理商： | NSTB60BDW1T1 |
Semiconductor Components Industries, LLC, 2002
June, 2002 – Rev. 2
1
Publication Order Number:
NSTB60BDW1T1/D
NSTB60BDW1T1
PNP General Purpose and
NPN Bias Resistor
Transistor Combination
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape and Reel
ESD Rating – Human Body Model: Class 1B
ESD Rating
– Machine Model: Class B
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted, common for Q
1
and Q
2
)
Rating
Symbol
Q
1
Q
2
Unit
Collector-Emitter Voltage
V
CEO
–50
50
Vdc
Collector-Base Voltage
V
CBO
–50
50
Vdc
Emitter–Base Voltage
V
EBO
–6.0
5.0
Vdc
Collector Current – Continuous
I
C
–150
150
mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
187 (Note 1)
256 (Note 2)
1.5 (Note 1)
2.0 (Note 2)
mW
mW/
°
C
Thermal Resistance –
Junction-to-Ambient
R
θ
JA
670 (Note 1)
490 (Note 2)
°
C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
250 (Note 1)
385 (Note 2)
2.0 (Note 1)
3.0 (Note 2)
mW
mW/
°
C
Thermal Resistance –
Junction-to-Ambient
R
θ
JA
493 (Note 1)
325 (Note 2)
°
C/W
Thermal Resistance –
Junction-to-Lead
R
θ
JL
188 (Note 1)
208 (Note 2)
°
C/W
Junction and Storage Temperature
T
J
, T
stg
–55 to +150
°
C
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
SOT–363
CASE 419B
STYLE 1
MARKING DIAGRAM
Q
1
R
2
R
1
Q
2
(4)
(5)
(6)
(1)
(2)
(3)
1
2
3
6
5
4
Device
Package
Shipping
ORDERING INFORMATION
NSTB60BDW1T1
SOT–363
3000/Tape & Reel
71
d
71 = Specific Device Code
d
= Date Code
http://onsemi.com
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NSTB60BDW1T1/D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:PNP General Purpose and NPN Bias Resistor Transistor combination |
| NSTB60BDW1T1G | 功能描述:開(kāi)關(guān)晶體管 - 偏壓電阻器 SS GP XSTR NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| NSTHS4101PT1G | 制造商:ON Semiconductor 功能描述: |
| NSTHS5404T1G | 制造商:ON Semiconductor 功能描述: |
| NSTJD1155LT1G | 功能描述:MOSFET NFET 8V 1.3A 175MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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