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參數(shù)資料
| 型號： | NSTB60BDW1T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP General Purpose and NPN Bias Resistor Transistor Combination(PNP通用與NPN偏置電阻晶體管組合) |
| 中文描述： | 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 419B-02, 6 PIN |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 83K |
| 代理商： | NSTB60BDW1T1 |
NSTB60BDW1T1
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| NSTB60BDW1T1/D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:PNP General Purpose and NPN Bias Resistor Transistor combination |
| NSTB60BDW1T1G | 功能描述:開關(guān)晶體管 - 偏壓電阻器 SS GP XSTR NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
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| NSTJD1155LT1G | 功能描述:MOSFET NFET 8V 1.3A 175MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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