參數(shù)資料
型號(hào): NSTB60BDW1T1
廠商: ON SEMICONDUCTOR
元件分類: 小信號(hào)晶體管
英文描述: PNP General Purpose and NPN Bias Resistor Transistor Combination(PNP通用與NPN偏置電阻晶體管組合)
中文描述: 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: CASE 419B-02, 6 PIN
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 83K
代理商: NSTB60BDW1T1
NSTB60BDW1T1
http://onsemi.com
3
Typical Electrical Characteristics – PNP Transistor
2.0
1.5
1.0
0.2
0.3
0.5
0.7
-200
-0.2
-0.5
-1.0
-2.0
-5.0
-10
-20
-50
-100
I
C
, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
h
V
CE
= -10 V
T
A
= 25
°
C
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
-0.1
I
C
, COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
V
T
A
= 25
°
C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= -10 V
V
CE(sat)
@ I
C
/I
B
= 10
400
300
20
30
40
60
80
100
200
I
C
, COLLECTOR CURRENT (mAdc)
Figure 3. Current–Gain – Bandwidth Product
f
C
10
1.0
2.0
3.0
5.0
7.0
-0.4
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitances
T
A
= 25
°
C
C
ib
C
ob
r
150
140
130
120
110
100
I
C
, COLLECTOR CURRENT (mAdc)
Figure 5. Output Admittance
-0.2
-0.5
-1.0
-2.0
-5.0
-10
-20
-50
-100
V
CE
= -10 V
T
A
= 25
°
C
-0.5
-1.0
-2.0 -3.0
-5.0
-10
-20
-30
-50
-0.6
-1.0
-2.0
-4.0
-6.0
-10
-20
-30 -40
1.0
I
C
, COLLECTOR CURRENT (mAdc)
Figure 6. Base Spreading Resistance
V
CE
= -10 V
f = 1.0 kHz
T
A
= 25
°
C
-0.1
-0.2 -0.3
-0.5
-1.0
-2.0 -3.0
-5.0
-10
V
CE
= -10 V
f = 1.0 kHz
T
A
= 25
°
C
-0.1
-0.2
-0.5
-1.0
-2.0
-5.0
-10
0.01
0.03
0.05
0.1
0.3
0.5
h
o
150
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