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參數(shù)資料
| 型號： | NSTB60BDW1T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP General Purpose and NPN Bias Resistor Transistor Combination(PNP通用與NPN偏置電阻晶體管組合) |
| 中文描述： | 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 419B-02, 6 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 83K |
| 代理商： | NSTB60BDW1T1 |
NSTB60BDW1T1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Q
1
Collector-Base Breakdown Voltage (I
C
= –50
μ
Adc, I
E
= 0)
V
(BR)CBO
–50
–
–
Vdc
Collector-Emitter Breakdown Voltage
(I
C
= –1.0 mAdc, I
B
= 0)
V
(BR)CEO
–50
–
–
Vdc
Emitter–Base Breakdown Voltage (I
E
= –50 Adc, I
E
= 0)
V
(BR)EBO
–6.0
–
–
Vdc
Collector–Base Cutoff Current (V
CB
= –50 Vdc, I
E
= 0)
I
CBO
–
–
–0.1
A
Emitter–Base Cutoff Current (V
EB
= –6.0 Vdc, I
B
= 0)
I
EBO
–
–
–0.1
A
Collector-Emitter Saturation Voltage
(I
C
= –50 mAdc, I
B
= –5.0 mAdc) (Note 3)
V
CE(sat)
–
–
–0.5
Vdc
DC Current Gain (V
CE
= –10 V, I
C
= –5.0 mA) (Note 3)
h
FE
120
–
560
–
Transition Frequency
(V
CE
= –12 Vdc, I
C
= –2.0 mAdc, f = 100 MHz)
f
T
–
140
–
MHz
Output Capacitance (V
CB
= –12 Vdc, I
E
= 0 Adc, f = 1.0 MHz)
Q
2
Collector-Base Breakdown Voltage (I
C
= 50
μ
A, I
E
= 0)
C
OB
–
3.5
–
pF
V
(BR)CBO
50
–
–
Vdc
Collector-Emitter Breakdown Voltage
(I
C
= 1.0 mA, I
B
= 0) (Note 3)
V
(BR)CEO
50
–
–
Vdc
Collector–Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
I
CBO
–
–
100
nAdc
Collector–Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
I
CEO
–
–
500
nAdc
Emitter–Base Cutoff Current (V
EB
= 6.0 V, I
C
= 0)
I
EBO
–
–
0.13
mAdc
Collector-Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 5.0 mA) (Note 3)
V
CE(sat)
–
–
0.25
Vdc
DC Current Gain (V
CE
= 10 V, I
C
= 5.0 mA) (Note 3)
h
FE
80
–
–
Output Voltage (on) (V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 k ) (Note 3)
V
OL
–
–
0.2
Vdc
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 k ) (Note 3)
V
OH
4.9
–
–
Vdc
Input Resistor (Note 3)
R1
15.4
22
28.6
k
Resistor Ratio (Note 3)
R2/R1
1.70
2.13
2.55
3. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| NSTB60BDW1T1/D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:PNP General Purpose and NPN Bias Resistor Transistor combination |
| NSTB60BDW1T1G | 功能描述:開關(guān)晶體管 - 偏壓電阻器 SS GP XSTR NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
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