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參數(shù)資料
| 型號： | NSS40600CF8T1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 40 V, 7.0 A, Low VCE(sat) PNP Transistor(40V, 7.0A, 低VCE(sat) PNP晶體管) |
| 中文描述： | 6000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, MINIATURE, CASE 1206A-03, CHIPFET-8 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 106K |
| 代理商： | NSS40600CF8T1G |
NSS40600CF8T1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
Unit
OFF CHARACTERISTICS
Collector
Emitter Breakdown Voltage
(I
C
=
10 mAdc, I
B
= 0)
V
(BR)CEO
40
Vdc
Collector
Base Breakdown Voltage
(I
C
=
0.1 mAdc, I
E
= 0)
V
(BR)CBO
40
Vdc
Emitter
Base Breakdown Voltage
(I
E
=
0.1 mAdc, I
C
= 0)
V
(BR)EBO
7.0
Vdc
Collector Cutoff Current
(V
CB
=
40 Vdc, I
E
= 0)
I
CBO
0.1
Adc
Emitter Cutoff Current
(V
EB
=
7.0 Vdc)
I
EBO
0.1
Adc
ON CHARACTERISTICS
DC Current Gain (Note 4)
(I
C
=
10 mA, I
C
=
2.0 V)
(I
C
=
500 mA, V
CE
=
2.0 V)
(I
C
=
1.0 A, V
CE
=
2.0 V)
(I
C
=
2.0 A, V
CE
=
2.0 V)
(I
C
=
3.0 A, V
CE
=
2.0 V)
h
FE
250
250
220
180
150
300
Collector
Emitter Saturation Voltage (Note 4)
(I
C
=
0.1 A, I
B
=
0.010 A) (Note 5)
(I
C
=
1.0 A, I
B
=
0.100 A)
(I
C
=
1.0 A, I
B
=
0.010 A)
(I
C
=
2.0 A, I
B
=
0.020 A)
(I
C
=
3.0 A, I
B
=
0.030 A)
(I
C
=
4.0 A, I
B
=
0.400 A)
V
CE(sat)
0.007
0.045
0.080
0.150
0.180
0.160
0.010
0.075
0.110
0.200
0.250
0.220
V
Base
Emitter Saturation Voltage (Note 4)
(I
C
=
1.0 A, I
B
=
0.01 A)
V
BE(sat)
0.90
V
Base
Emitter Turn
on Voltage (Note 4)
(I
C
=
2.0 A, V
CE
=
3.0 V)
V
BE(on)
0.90
V
Cutoff Frequency
(I
C
=
100 mA, V
CE
=
5.0 V, f = 100 MHz)
f
T
100
MHz
Input Capacitance (V
EB
=
0.5 V, f = 1.0 MHz)
Cibo
650
pF
Output Capacitance (V
CB
=
3.0 V, f = 1.0 MHz)
Cobo
150
pF
SWITCHING CHARACTERISTICS
Delay (V
CC
= 30 V, I
C
= 750 mA, I
B1
= 15 mA)
t
d
120
ns
Rise (V
CC
= 30 V, I
C
= 750 mA, I
B1
= 15 mA)
t
r
220
ns
Storage (V
CC
= 30 V, I
C
= 750 mA, I
B1
= 15 mA)
t
s
650
ns
Fall (V
CC
= 30 V, I
C
= 750 mA, I
B1
= 15 mA)
4. Pulsed Condition: Pulse Width = 300 sec, Duty Cycle
≤
2%.
5. Guaranteed by design but not tested.
t
f
240
ns
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