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參數(shù)資料
| 型號： | NSS40200LT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 40 V, 4.0 A, Low VCE(sat) PNP Transistor(40V, 4.0A, 低VCE(sat) PNP晶體管) |
| 中文描述： | 2000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 106K |
| 代理商： | NSS40200LT1G |
Semiconductor Components Industries, LLC, 2007
March, 2007
Rev. 2
1
Publication Order Number:
NSS40200L/D
NSS40200LT1G
40 V, 4.0 A, Low V
CE(sat)
PNP Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors
are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC
DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
This is a Pb
Free Device
MAXIMUM RATINGS
(T
A
= 25
°
C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
V
CEO
40
Vdc
Collector-Base Voltage
V
CBO
40
Vdc
Emitter-Base Voltage
V
EBO
7.0
Vdc
Collector Current
Continuous
I
C
2.0
A
Collector Current
Peak
I
CM
4.0
A
Electrostatic Discharge
ESD
HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
(Note 1)
460
3.7
mW
mW/
°
C
Thermal Resistance,
Junction
to
Ambient
R
JA
(Note 1)
270
°
C/W
Total Device Dissipation
T
= 25
°
C
Derate above 25
°
C
P
D
(Note 2)
540
4.3
mW
mW/
°
C
Thermal Resistance,
Junction
to
Ambient
R
JA
(Note 2)
230
°
C/W
Total Device Dissipation
(Single Pulse < 10 sec)
P
Dsingle
(Note 3)
710
mW
Junction and Storage
Temperature Range
T
J
, T
stg
55 to
+150
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR
4 @ 100 mm
2
, 1 oz. copper traces.
2. FR
4 @ 500 mm
2
, 1 oz. copper traces.
3. Thermal response.
Device
Package
Shipping
ORDERING INFORMATION
NSS40200LT1G
SOT
23
(Pb
Free)
3000/Tape & Reel
DEVICE MARKING
COLLECTOR
3
1
BASE
2
EMITTER
SOT
23 (TO
236)
CASE 318
STYLE 6
3
2
1
http://onsemi.com
40 VOLTS
4.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
80 m
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
VA M
VA
M
= Specific Device Code
= Date Code*
= Pb
Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| NSS40200LT1G_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:40 V, 4.0 A, Low VCE(sat) PNP Transistor |
| NSS40200UW6T1G | 功能描述:兩極晶體管 - BJT WDFN6 2*2 LOW VCE (SAT) TR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NSS40201LT1G | 功能描述:兩極晶體管 - BJT LO V PNP TRANSISTOR 40V 4.0A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NSS40300DDR2 | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
| NSS40300DDR2G | 功能描述:兩極晶體管 - BJT DUAL 40V LOW VCE XTR PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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