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參數(shù)資料
| 型號： | NSS40200LT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 40 V, 4.0 A, Low VCE(sat) PNP Transistor(40V, 4.0A, 低VCE(sat) PNP晶體管) |
| 中文描述： | 2000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 106K |
| 代理商： | NSS40200LT1G |
NSS40200LT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector
Emitter Breakdown Voltage
(I
C
=
10 mAdc, I
B
= 0)
V
(BR)CEO
40
Vdc
Collector
Base Breakdown Voltage
(I
C
=
0.1 mAdc, I
E
= 0)
V
(BR)CBO
40
Vdc
Emitter
Base Breakdown Voltage
(I
E
=
0.1 mAdc, I
C
= 0)
V
(BR)EBO
7.0
Vdc
Collector Cutoff Current
(V
CB
=
40 Vdc, I
E
= 0)
I
CBO
0.1
Adc
Emitter Cutoff Current
(V
EB
=
7.0 Vdc)
I
EBO
0.1
Adc
ON CHARACTERISTICS
DC Current Gain (Note 4)
(I
C
=
10 mA, V
CE
=
2.0 V)
(I
C
=
500 mA, V
CE
=
2.0 V)
(I
C
=
1.0 A, V
CE
=
2.0 V)
(I
C
=
2.0 A, V
CE
=
2.0 V)
h
FE
250
220
180
150
300
Collector
Emitter Saturation Voltage (Note 4)
(I
C
=
0.1 A, I
B
=
0.010 A) (Note 5)
(I
C
=
1.0 A, I
B
=
0.100 A)
(I
C
=
1.0 A, I
B
=
0.010 A)
(I
C
=
2.0 A, I
B
=
0.200 A)
V
CE(sat)
0.010
0.080
0.135
0.135
0.017
0.095
0.170
0.170
V
Base
Emitter Saturation Voltage (Note 4)
(I
C
=
1.0 A, I
B
=
0.01 A)
V
BE(sat)
0.900
V
Base
Emitter Turn
on Voltage (Note 4)
(I
C
=
1.0 A, V
CE
=
2.0 V)
V
BE(on)
0.900
V
Cutoff Frequency
(I
C
=
100 mA, V
CE
=
5.0 V, f = 100 MHz)
f
T
100
MHz
Input Capacitance (V
EB
= 0.5 V, f = 1.0 MHz)
Cibo
325
pF
Output Capacitance (V
CB
= 3.0 V, f = 1.0 MHz)
Cobo
62
pF
SWITCHING CHARACTERISTICS
Delay (V
CC
=
30 V, I
C
= 750 mA, I
B1
= 15 mA)
t
d
60
ns
Rise (V
CC
=
30 V, I
C
= 750 mA, I
B1
= 15 mA)
t
r
120
ns
Storage (V
CC
=
30 V, I
C
= 750 mA, I
B1
= 15 mA)
t
s
400
ns
Fall (V
CC
=
30 V, I
C
= 750 mA, I
B1
= 15 mA)
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle
≤
2%.
5. Guaranteed by design but not tested.
t
f
130
ns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NSS40200LT1G_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:40 V, 4.0 A, Low VCE(sat) PNP Transistor |
| NSS40200UW6T1G | 功能描述:兩極晶體管 - BJT WDFN6 2*2 LOW VCE (SAT) TR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NSS40201LT1G | 功能描述:兩極晶體管 - BJT LO V PNP TRANSISTOR 40V 4.0A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NSS40300DDR2 | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
| NSS40300DDR2G | 功能描述:兩極晶體管 - BJT DUAL 40V LOW VCE XTR PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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