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參數(shù)資料
| 型號： | NSS20600CF8T1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 20 V, 7.0 A, Low VCE(sat) PNP Transistor(20V, 7.0A, 低VCE(sat) PNP晶體管) |
| 中文描述： | 6000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, CASE 1206A-03, 8 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 106K |
| 代理商： | NSS20600CF8T1G |
NSS20600CF8T1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
Unit
OFF CHARACTERISTICS
Collector
Emitter Breakdown Voltage
(I
C
=
10 mAdc, I
B
= 0)
V
(BR)CEO
20
Vdc
Collector
Base Breakdown Voltage
(I
C
=
0.1 mAdc, I
E
= 0)
V
(BR)CBO
20
Vdc
Emitter
Base Breakdown Voltage
(I
E
=
0.1 mAdc, I
C
= 0)
V
(BR)EBO
7.0
Vdc
Collector Cutoff Current
(V
CB
=
20 Vdc, I
E
= 0)
I
CBO
0.1
Adc
Emitter Cutoff Current
(V
EB
=
7.0 Vdc)
I
EBO
0.1
Adc
ON CHARACTERISTICS
DC Current Gain (Note 4)
(I
C
=
10 mA, I
C
=
2.0 V)
(I
C
=
500 mA, V
CE
=
2.0 V)
(I
C
=
1.0 A, V
CE
=
2.0 V)
(I
C
=
2.0 A, V
CE
=
2.0 V)
(I
C
=
3.0 A, V
CE
=
2.0 V)
h
FE
250
250
220
200
180
300
Collector
Emitter Saturation Voltage (Note 4)
(I
C
=
0.1 A, I
B
=
0.010 A) (Note 5)
(I
C
=
1.0 A, I
B
=
0.100 A)
(I
C
=
1.0 A, I
B
=
0.010 A)
(I
C
=
2.0 A, I
B
=
0.020 A)
(I
C
=
3.0 A, I
B
=
0.030 A)
(I
C
=
4.0 A, I
B
=
0.400 A)
V
CE(sat)
0.007
0.050
0.065
0.090
0.140
0.160
0.010
0.060
0.080
0.130
0.180
0.200
V
Base
Emitter Saturation Voltage (Note 4)
(I
C
=
1.0 A, I
B
=
0.01 A)
V
BE(sat)
0.90
V
Base
Emitter Turn
on Voltage (Note 4)
(I
C
=
2.0 A, V
CE
=
3.0 V)
V
BE(on)
0.90
V
Cutoff Frequency
(I
C
=
100 mA, V
CE
=
5.0 V, f = 100 MHz)
f
T
100
MHz
Input Capacitance (V
EB
=
0.5 V, f = 1.0 MHz)
Cibo
700
pF
Output Capacitance (V
CB
=
3.0 V, f = 1.0 MHz)
Cobo
280
pF
SWITCHING CHARACTERISTICS
Delay (V
CC
=
15 V, I
C
= 750 mA, I
B1
= 15 mA)
t
d
120
ns
Rise (V
CC
=
15 V, I
C
= 750 mA, I
B1
= 15 mA)
t
r
250
ns
Storage (V
CC
=
15 V, I
C
= 750 mA, I
B1
= 15 mA)
t
s
400
ns
Fall (V
CC
=
15 V, I
C
= 750 mA, I
B1
= 15 mA)
4. Pulsed Condition: Pulse Width = 300 sec, Duty Cycle
≤
2%.
5. Guaranteed by design but not tested.
t
f
250
ns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NSS20600CF8T1G_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:20 V, 7.0 A, Low VCE(sat) PNP Transistor |
| NSS20601CF8T1G | 功能描述:兩極晶體管 - BJT OCTAL BUS TRANSCEIVR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NSS30070MR6T1G | 功能描述:兩極晶體管 - BJT 700mA 30V Low VCEsat RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NSS30071MR6T1G | 功能描述:兩極晶體管 - BJT 700mA 30V Low VCEsat RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NSS30100LT1G | 功能描述:兩極晶體管 - BJT 2A 30V Low VCEsat RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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