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參數(shù)資料
| 型號(hào)： | NSS12200WT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 12V, 3A, Low VCE(sat) PNP Transistor(12V, 3A, 低VCE(sat) PNP晶體管) |
| 中文描述： | 2000 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, MINIATURE, CASE 419B-02, SC-70, SC-88, 6 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 58K |
| 代理商： | NSS12200WT1G |
Semiconductor Components Industries, LLC, 2005
June, 2005 Rev. 0
1
Publication Order Number:
NSS12200W/D
NSS12200WT1G
12 V, 3 A, Low V
CE(sat)
PNP Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors
are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DCDC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
High Current Capability (3 A)
High Power Handling (Up to 650 mW)
Low V
CE(s)
(170 mV Typical @ 1 A)
Small Size
This is a PbFree Device
Benefits
High Specific Current and Power Capability Reduces Required PCB Area
Reduced Parasitic Losses Increases Battery Life
MAXIMUM RATINGS
(T
A
= 25
°
C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
V
CEO
V
CBO
12
Vdc
Collector-Base Voltage
12
Vdc
Emitter-Base Voltage
V
EBO
5.0
Vdc
Collector Current Continuous
Collector Current
Peak
I
C
I
CM
2.0
3.0
Adc
Electrostatic Discharge
ESD
HBM Class 3
MM Class C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
V2 = Specific Device Code
M = Date Code
= PbFree Package
12 VOLTS
3.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
163 m
COLLECTOR
1, 2, 5, 6
3
BASE
4
EMITTER
SC88/SOT363
CASE 419B
STYLE 20
1
V2
M
1
6
DEVICE MARKING
Device
Package
Shipping
ORDERING INFORMATION
NSS12200WT1G
SOT363
(PbFree)
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NSS12200WT1G_09 | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:12 V, 3 A, Low VCE(sat) PNP Transistor |
| NSS12201LT1G | 功能描述:兩極晶體管 - BJT LO V NPN TRANSISTOR 12V 4.0A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NSS12500UW3T2G | 功能描述:兩極晶體管 - BJT 2 2 LOW VCE(SAT) TR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NSS12500UW3T2G_07 | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:12 V, 8.0 A, Low VCE(sat) PNP Transistor |
| NSS12501UW3T2G | 功能描述:兩極晶體管 - BJT LO V NPN TRANSISTOR 12V 7.0A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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