參數(shù)資料
型號： NSS20200LT1G
廠商： ON SEMICONDUCTOR
元件分類： 小信號晶體管
英文描述： 20 V, 4.0 A, Low VCE(sat) PNP Transistor(20V, 4.0A, 低VCE(sat) PNP晶體管)
中文描述： 2000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
封裝： HALOGEN FREE AND ROHS COMPLIANT, MINIATURE, CASE 318-08, 3 PIN
文件頁數(shù)： 1/5頁
文件大?。?/td> 106K
代理商： NSS20200LT1G
Semiconductor Components Industries, LLC, 2007
March, 2007
Rev. 2
1
Publication Order Number:
NSS20200L/D
NSS20200LT1G
20 V, 4.0 A, Low V
CE(sat)
PNP Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors
are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC
DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
This is a Pb
Free Device
MAXIMUM RATINGS
(T
A
= 25
°
C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
V
CEO
20
Vdc
Collector-Base Voltage
V
CBO
20
Vdc
Emitter-Base Voltage
V
EBO
7.0
Vdc
Collector Current
Continuous
I
C
2.0
A
Collector Current
Peak
I
CM
ESD
4.0
A
Electrostatic Discharge
HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
(Note 1)
460
3.7
mW
mW/
°
C
Thermal Resistance,
Junction
to
Ambient
R
JA
(Note 1)
270
°
C/W
Total Device Dissipation
T
= 25
°
C
Derate above 25
°
C
P
D
(Note 2)
540
4.3
mW
mW/
°
C
Thermal Resistance,
Junction
to
Ambient
R
JA
(Note 2)
230
°
C/W
Total Device Dissipation
(Single Pulse < 10 sec.)
P
Dsingle
(Note 3)
710
mW
Junction and Storage
Temperature Range
T
J
, T
stg
55 to
+150
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR
4 @ 100 mm
2
, 1 oz. copper traces.
2. FR
4 @ 500 mm
2
, 1 oz. copper traces.
3. Thermal response.
Device
Package
Shipping
ORDERING INFORMATION
NSS20200LT1G
SOT
23
(Pb
Free)
3000/Tape & Reel
DEVICE MARKING
COLLECTOR
3
1
BASE
2
EMITTER
SOT
23 (TO
236)
CASE 318
STYLE 6
3
2
1
http://onsemi.com
20 VOLTS
4.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
65 m
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
VC M
VC = Specific Device Code
M
= Date Code*
= Pb
Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
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相關代理商/技術參數(shù)
參數(shù)描述
NSS20200LT1G_07 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:20 V, 4.0 A, Low VCE(sat) PNP Transistor
NSS20200W6 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:20 V, 3.0 A, Low VCE(sat) PNP Transistor
NSS20200W6T1G 功能描述:兩極晶體管 - BJT SC88 6L LOW VCE(SAT) RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
NSS20201JT1G 制造商:LINER 制造商全稱:Linear Technology 功能描述:36V, 2.6A Monolithic Buck
NSS20201LT1G 功能描述:兩極晶體管 - BJT QUAD 2CH MULTIPLEXER RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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