參數(shù)資料
型號(hào): NSS20200LT1G
廠商: ON SEMICONDUCTOR
元件分類: 小信號(hào)晶體管
英文描述: 20 V, 4.0 A, Low VCE(sat) PNP Transistor(20V, 4.0A, 低VCE(sat) PNP晶體管)
中文描述: 2000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
封裝: HALOGEN FREE AND ROHS COMPLIANT, MINIATURE, CASE 318-08, 3 PIN
文件頁數(shù): 2/5頁
文件大小: 106K
代理商: NSS20200LT1G
NSS20200LT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector
Emitter Breakdown Voltage
(I
C
=
10 mAdc, I
B
= 0)
V
(BR)CEO
20
Vdc
Collector
Base Breakdown Voltage
(I
C
=
0.1 mAdc, I
E
= 0)
V
(BR)CBO
20
Vdc
Emitter
Base Breakdown Voltage
(I
E
=
0.1 mAdc, I
C
= 0)
V
(BR)EBO
7.0
Vdc
Collector Cutoff Current
(V
CB
=
20 Vdc, I
E
= 0)
I
CBO
0.1
Adc
Emitter Cutoff Current
(V
EB
=
7.0 Vdc)
I
EBO
0.1
Adc
ON CHARACTERISTICS
DC Current Gain (Note 4)
(I
C
=
10 mA, V
CE
=
2.0 V)
(I
C
=
500 mA, V
CE
=
2.0 V)
(I
C
=
1.0 A, V
CE
=
2.0 V)
(I
C
=
2.0 A, V
CE
=
2.0 V)
h
FE
250
250
180
150
300
Collector
Emitter Saturation Voltage (Note 4)
(I
C
=
0.1 A, I
B
=
0.010 A) (Note 5)
(I
C
=
1.0 A, I
B
=
0.100 A)
(I
C
=
1.0 A, I
B
=
0.010 A)
(I
C
=
2.0 A, I
B
=
0.200 A)
V
CE(sat)
0.008
0.065
0.100
0.130
0.013
0.090
0.120
0.180
V
Base
Emitter Saturation Voltage (Note 4)
(I
C
=
1.0 A, I
B
=
0.01 A)
V
BE(sat)
0.900
V
Base
Emitter Turn
on Voltage (Note 4)
(I
C
=
1.0 A, V
CE
=
2.0 V)
V
BE(on)
0.900
V
Cutoff Frequency
(I
C
=
100 mA, V
CE
=
5.0 V, f = 100 MHz)
f
T
100
MHz
Input Capacitance (V
EB
= 0.5 V, f = 1.0 MHz)
Cibo
330
pF
Output Capacitance (V
CB
= 3.0 V, f = 1.0 MHz)
Cobo
100
pF
SWITCHING CHARACTERISTICS
Delay (V
CC
=
15 V, I
C
= 750 mA, I
B1
= 15 mA)
t
d
60
ns
Rise (V
CC
=
15 V, I
C
= 750 mA, I
B1
= 15 mA)
t
r
120
ns
Storage (V
CC
=
15 V, I
C
= 750 mA, I
B1
= 15 mA)
t
s
300
ns
Fall (V
CC
=
15 V, I
C
= 750 mA, I
B1
= 15 mA)
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle
2%.
5. Guaranteed by design but not tested.
t
f
130
ns
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