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參數(shù)資料
| 型號： | NSS20300MR6T1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 20V, 5A, Low VCE(sat) PNP Transistor(20V,5A,低VCE(sat)，PNP型晶體管) |
| 中文描述： | 3 A, 20 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | LEAD FREE, MINIATURE, CASE 318G-02, TSOP-6 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 49K |
| 代理商： | NSS20300MR6T1G |
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 0
1
Publication Order Number:
NSS20300MR6/D
NSS20300MR6T1G
20 V, 5 A, Low V
CE(sat)
PNP Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors
are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DCDC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
MAXIMUM RATINGS
(T
A
= 25
°
C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
V
CEO
V
CBO
V
EBO
I
C
I
CM
ESD
20
Vdc
Collector-Base Voltage
30
Vdc
Emitter-Base Voltage
6.0
Vdc
Collector Current Continuous
3.0
Adc
Collector Current Peak
5.0
A
Electrostatic Discharge
HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation, T
A
= 25
°
C
Derate above 25
°
C
P
D
(Note 1)
545
4.3
mW
mW/
°
C
Thermal Resistance,
JunctiontoAmbient
R
θ
JA
(Note 1)
230
°
C/W
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
(Note 2)
106
8.5
W
mW/
°
C
°
C/W
Thermal Resistance,
JunctiontoAmbient
R
θ
JA
(Note 2)
118
Thermal Resistance,
JunctiontoLead #1
R
θ
JL
(Note 1)
R
θ
JL
(Note 2)
P
Dsingle
(Note 2)
48
40
°
C/W
°
C/W
Total Device Dissipation
(Single Pulse < 10 sec.)
1.75
W
Junction and Storage
Temperature Range
T
J
, T
stg
55 to
+150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR4 @ 100 mm
2
, 2 oz copper traces.
2. FR4 @ 500 mm
2
, 2 oz copper traces.
Device
Package
Shipping
ORDERING INFORMATION
NSS20300MR6T1G
TSOP6
(PbFree)
http://onsemi.com
CASE 318G
TSOP6
STYLE 6
3000/Tape & Reel
4
56
321
COLLECTOR
1, 2, 5, 6
3
BASE
4
EMITTER
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
20 VOLTS
5.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
78 m
DEVICE MARKING
VS1 M
VS1
M
= Specific Device Code
= Date Code
= PbFree Package
(Note: Microdot may be in either location)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NSS20300MR6T1G_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:20 V, 5 A, Low VCE(sat) PNP Transistor |
| NSS20500UW3T2G | 功能描述:兩極晶體管 - BJT 20V PNP LOW VCE(SAT) XTR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NSS20500UW3T2G_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:20 V, 7.0 A, Low VCE(sat) PNP Transistor |
| NSS20500UW3TBG | 制造商:ON Semiconductor 功能描述:20V PNP LOW VCE(SAT) XTR - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / 20V PNP LOW VCE(SAT) XTR |
| NSS20501UW3T2G | 功能描述:兩極晶體管 - BJT LO V NPN TRANSISTOR 20V 7.0A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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