- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363665 > NSB8 (Electronic Theatre Controls, Inc.) BASIC interpreter for Z80 family PDF資料下載
參數(shù)資料
| 型號(hào)： | NSB8 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | BASIC interpreter for Z80 family |
| 中文描述： | Z80的BASIC解釋為家庭 |
| 文件頁(yè)數(shù)： | 101/158頁(yè) |
| 文件大?。?/td> | 752K |
| 代理商： | NSB8 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)第87頁(yè)第88頁(yè)第89頁(yè)第90頁(yè)第91頁(yè)第92頁(yè)第93頁(yè)第94頁(yè)第95頁(yè)第96頁(yè)第97頁(yè)第98頁(yè)第99頁(yè)第100頁(yè)當(dāng)前第101頁(yè)第102頁(yè)第103頁(yè)第104頁(yè)第105頁(yè)第106頁(yè)第107頁(yè)第108頁(yè)第109頁(yè)第110頁(yè)第111頁(yè)第112頁(yè)第113頁(yè)第114頁(yè)第115頁(yè)第116頁(yè)第117頁(yè)第118頁(yè)第119頁(yè)第120頁(yè)第121頁(yè)第122頁(yè)第123頁(yè)第124頁(yè)第125頁(yè)第126頁(yè)第127頁(yè)第128頁(yè)第129頁(yè)第130頁(yè)第131頁(yè)第132頁(yè)第133頁(yè)第134頁(yè)第135頁(yè)第136頁(yè)第137頁(yè)第138頁(yè)第139頁(yè)第140頁(yè)第141頁(yè)第142頁(yè)第143頁(yè)第144頁(yè)第145頁(yè)第146頁(yè)第147頁(yè)第148頁(yè)第149頁(yè)第150頁(yè)第151頁(yè)第152頁(yè)第153頁(yè)第154頁(yè)第155頁(yè)第156頁(yè)第157頁(yè)第158頁(yè)
ITALIAN TECHNOLOGY
grifo
Page 89
NSB8 Rel. 5.10
EXECUTION AND CONTROL FLOW
The action specified by each statement in a BASIC program is performed when that statement is
executed. In BASIC, statements are ususally executed in a sequential fashion, one after the
other. BASIC scans a program and executes its statements as you would read the program listing:
from lines with lower numbers to lines with greater numbers, and, if there is more than one statement
on a line, from the leftmost statement to the rightmost statement on that line.
The order of statement execution (also called control flow) may be altered through the use of several
special BASIC statements: GOTO, IF...THEN, FOR, NEXT, EXIT, GOSUB, RETURN
and ON…GOTO. Each of these CONTROL STATEMENTs is described in greater detail in its own
section of this manual.
A control statement forces BASIC to treat the line number it specifies or the program location it
implies as the location of the next statement to execute. Unless another control statement is
encountered, BASIC will return to sequential execution at the new location.
In BASIC programs, the natural flow of control is often diverted, in order to achieve savings in
program execution time and storage requirements. For example, repetition of program lines, a
powerful space saver, may be accomplished by using IF…THEN and GOTO statements. A common
repetitive looping technique uses the statements FOR and NEXT (and, occasionally, the EXIT
statement as well). Often, the program must make a choice on which of several alternative instruction
blocks is to be executed next, based on a given condition. IF…THEN statements are used to evaluate
the conditions and route control to the appropriate parts of the program. In certainsituations, the
ON…GOTO statement may be used in this capacity. Finally, GOSUB and RETURN are used to
implement subroutines, which allow a programmer to substitute single GOSUB statements for entire
large program segments, provided the segments (subroutines) are defined elsewhere in the program
text.
SEE ALSO:
Statement GOTO
Statement IF
Statement ON
Statement STOP
Statement END
Section THE FOR NEXT LOOP
Section PROCEDURES
Section FUNCTIONS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NSB9435T1 | High Current Bias Resistor Transistors(高強(qiáng)度電流偏置電阻晶體管) |
| NSBA114EDXV6T1 | Dual Bias Resistor Transistors(雙偏置電阻晶體管) |
| NSBA114YDXV6T1 | Dual Bias Resistor Transistors(雙偏置電阻晶體管) |
| NSBC143TPDXV6T1 | Dual Bias Resistor Transistors(雙偏置電阻晶體管) |
| NSBC144EPDXV6T1 | Dual Bias Resistor Transistors(雙偏置電阻晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NSB8AT | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Glass Passivated General Purpose Plastic Rectifier |
| NSB8AT/31 | 功能描述:整流器 50 Volt 8.0 Amp 125 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| NSB8AT/45 | 功能描述:整流器 50 Volt 8.0 Amp 125 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| NSB8AT/81 | 功能描述:二極管 - 通用，功率，開關(guān) 50 Volt 8.0 Amp 125 Amp IFSM RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| NSB8AT-E3/31 | 功能描述:整流器 50 Volt 8.0 Amp 125 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。