參數(shù)資料
型號(hào)： NGD18N40CLBT4
廠(chǎng)商： ON SEMICONDUCTOR
元件分類(lèi)： IGBT 晶體管
英文描述： Ignition IGBT 18 Amps, 400 Volts
中文描述： 15 A, 430 V, N-CHANNEL IGBT
封裝： CASE 369C-01, DPAK-3
文件頁(yè)數(shù)： 3/8頁(yè)
文件大?。?/td> 70K
代理商： NGD18N40CLBT4
NGD18N40CLBT4
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(continued)
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
V
GE(th)
I
C
= 1.0 mA,
V
GE
= V
CE
1 0
T
J
= 25
°
C
1.1
1.4
1.9
V
DC
T
J
= 150
°
C
0.75
1.0
1.4
T
J
= 40
°
C
1.2
1.6
2.1*
Threshold Temperature Coefficient
(Negative)
3.4
mV/
°
C
CollectortoEmitter OnVoltage
V
CE(on)
T
J
= 25
°
C
1.0
1.4
1.6
V
DC
I
C
= 6.0 A,
V
GE
= 4.0 V
T
J
= 150
°
C
0.9
1.3
1.6
T
J
= 40
°
C
1.1
1.45
1.7*
T
J
= 25
°
C
1.3
1.6
1.9*
I
C
= 8.0 A,
V
GE
= 4.0 V
T
J
= 150
°
C
1.2
1.55
1.8
T
J
= 40
°
C
1.4
1.6
1.9*
T
J
= 25
°
C
1.4
1.8
2.05
I
C
= 10 A,
V
GE
= 4.0 V
T
J
= 150
°
C
1.4
1.8
2.0
T
J
= 40
°
C
1.4
1.8
2.1*
T
J
= 25
°
C
1.8
2.2
2.5
I
C
= 15 A,
V
GE
= 4.0 V
T
J
= 150
°
C
2.0
2.4
2.6*
T
J
= 40
°
C
1.7
2.1
2.5
T
J
= 25
°
C
1.3
1.8
2.0*
I
C
= 10 A,
V
GE
= 4.5 V
T
J
= 150
°
C
1.3
1.75
2.0*
T
J
= 40
°
C
1.4
1.8
2.0*
I
C
= 6.5 A,
V
GE
= 3.7 V
T
J
= 25
°
C
1.65
Forward Transconductance
gfs
V
CE
= 5.0 V, I
C
= 6.0 A
T
J
= 40
°
C to
150
°
C
8.0
14
25
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
T
J
= 40
C to
150
°
C
°
400
800
1000
pF
Output Capacitance
C
OSS
V
CC
= 25 V, V
GE
= 0 V
f = 1.0 MHz
50
75
100
Transfer Capacitance
C
RSS
4.0
7.0
10
SWITCHING CHARACTERISTICS
TurnOff Delay Time (Resistive)
t
d(off)
V
CC
= 300 V, I
C
= 6.5 A
R
G
= 1.0 k
, R
L
= 46
,
T
J
= 25
°
C
4.0
10
μ
Sec
Fall Time (Resistive)
t
f
V
CC
= 300 V, I
C
= 6.5 A
R
G
= 1.0 k
, R
L
= 46
,
T
J
= 25
°
C
9.0
15
TurnOn Delay Time
t
d(on)
V
CC
= 10 V, I
C
= 6.5 A
R
G
= 1.0 k
, R
L
= 1.5
T
J
= 25
°
C
0.7
4.0
μ
Sec
Rise Time
t
r
V
CC
= 10 V, I
C
= 6.5 A
R
G
= 1.0 k
, R
L
= 1.5
T
J
= 25
°
C
4.5
7.0
2. Pulse Test: Pulse Width
*Maximum Value of Characteristic across Temperature Range.
300
μ
S, Duty Cycle
2%.
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