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參數(shù)資料
| 型號： | NGD18N40CLBT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Ignition IGBT 18 Amps, 400 Volts |
| 中文描述： | 15 A, 430 V, N-CHANNEL IGBT |
| 封裝： | CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 70K |
| 代理商： | NGD18N40CLBT4 |
Semiconductor Components Industries, LLC, 2003
November, 2003 Rev. 5
1
Publication Order Number:
NGD18N40CLB/D
NGD18N40CLBT4
Ignition IGBT
18 Amps, 400 Volts
NChannel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and OverVoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Ideal for CoilonPlug Applications
DPAK Package Offers Smaller Footprint for Increased Board Space
GateEmitter ESD Protection
Temperature Compensated GateCollector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
Low Threshold Voltage Interfaces Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (R
G
) and GateEmitter Resistor (R
GE
)
Emitter Ballasting for ShortCircuit Capability
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CES
430
V
DC
CollectorGate Voltage
V
CER
430
V
DC
GateEmitter Voltage
V
GE
18
V
DC
Collector CurrentContinuous
@ T
C
= 25
°
C Pulsed
I
C
15
50
A
DC
A
AC
ESD (Human Body Model)
R = 1500
, C = 100 pF
ESD
8.0
kV
ESD (Machine Model) R = 0
, C = 200 pF
ESD
800
V
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
115
0.77
Watts
W/
°
C
Operating and Storage Temperature Range
T
J
, T
stg
55 to
+175
°
C
18 AMPS
400 VOLTS
V
CE(on)
2.0 V @
I
C
= 10 A, V
GE
4.5 V
C
E
G
RGE
RG
DPAK
CASE 369C
STYLE 7
1 2
3
4
http://onsemi.com
MARKING
DIAGRAM
1
Gate
4
Collector
2
Collector
3
Emitter
YWW
G18
N40B
G18N40B = NGD18N40CLB
Y
= Year
WW
= Work Week
Device
Package
Shipping
ORDERING INFORMATION
NGD18N40CLB
DPAK
75 Units/Rail
NGD18N40CLBT4
DPAK
2500/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
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| NGD18N40CLBT4G | 功能描述:IGBT 晶體管 18A 400V Ignition N-Channel RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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| NGD8201ANT4G | 功能描述:IGBT 晶體管 NGD8201ANT4G GEN4 IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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