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參數(shù)資料
| 型號： | NID6002N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Self(自保護(hù)型FET（帶過溫和過流保護(hù)）) |
| 中文描述： | 自（自保護(hù)型場效應(yīng)管（帶過溫和過流保護(hù)）） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 67K |
| 代理商： | NID6002N |
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 4
1
Publication Order Number:
NID6002N/D
NID6002N
Preferred Device
SelfProtected FET
with Temperature and
Current Limit
65 V, 6.5 A, Single NChannel, DPAK
HDPlus
devices are an advanced series of power MOSFETs
which utilize ON Semiconductor’s latest MOSFET technology
process to achieve the lowest possible onresistance per silicon area
while incorporating smart features. Integrated thermal and current
limits work together to provide short circuit protection. The devices
feature an integrated DraintoGate Clamp that enables them to
withstand high energy in the avalanche mode. The Clamp also
provides additional safety margin against unexpected voltage
transients. Electrostatic Discharge (ESD) protection is provided by an
integrated GatetoSource Clamp.
Features
Short Circuit Protection/Current Limit
Thermal Shutdown with Automatic Restart
I
DSS
Specified at Elevated Temperature
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
PbFree Package is Available
Device
Package
Shipping
ORDERING INFORMATION
NID6002NT4
DPAK
2500/Tape & Reel
DPAK
CASE 369C
STYLE 2
M
PWR
Drain
Source
Temperature
Limit
Gate
Input
MARKING
DIAGRAM
D6002N = Device Code
Y
= Year
WW
= Work Week
G
= PbFree Device
Current
Limit
Current
Sense
R
G
Overvoltage
Protection
ESD Protection
Preferred
devices are recommended choices for future use
and best overall value.
YYW
D6
002NG
1
2
3
= Gate
= Drain
= Source
1
2
3
V
DSS
(Clamped)
R
DS(on)
TYP
I
D
TYP
(Limited)
65 V
210 m
6.5 A
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
http://onsemi.com
NID6002NT4G
DPAK
(PbFree)
2500/Tape & Reel
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NID6002NT4 | 功能描述:MOSFET NFET 60V HD+ RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NID6002NT4G | 功能描述:MOSFET NFET 60V HD+ RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NID60S24-05 | 功能描述:DC/DC轉(zhuǎn)換器 20-53Vin 5Vout 4A 20W SIP non-isolated RoHS:否 制造商:Murata 產(chǎn)品: 輸出功率: 輸入電壓范圍:3.6 V to 5.5 V 輸入電壓（標(biāo)稱）: 輸出端數(shù)量:1 輸出電壓（通道 1）:3.3 V 輸出電流（通道 1）:600 mA 輸出電壓（通道 2）: 輸出電流（通道 2）: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體尺寸: |
| NID60S24-12 | 功能描述:DC/DC轉(zhuǎn)換器 20-53Vin 12Vout 4A 48W SIP non-isolated RoHS:否 制造商:Murata 產(chǎn)品: 輸出功率: 輸入電壓范圍:3.6 V to 5.5 V 輸入電壓（標(biāo)稱）: 輸出端數(shù)量:1 輸出電壓（通道 1）:3.3 V 輸出電流（通道 1）:600 mA 輸出電壓（通道 2）: 輸出電流（通道 2）: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體尺寸: |
| NID60S24-15 | 功能描述:DC/DC轉(zhuǎn)換器 20-53Vin 15Vout 4A 60W SIP non-isolated RoHS:否 制造商:Murata 產(chǎn)品: 輸出功率: 輸入電壓范圍:3.6 V to 5.5 V 輸入電壓（標(biāo)稱）: 輸出端數(shù)量:1 輸出電壓（通道 1）:3.3 V 輸出電流（通道 1）:600 mA 輸出電壓（通道 2）: 輸出電流（通道 2）: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體尺寸: |
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