參數(shù)資料
型號(hào): NID6002N
廠商: ON SEMICONDUCTOR
英文描述: Self(自保護(hù)型FET(帶過溫和過流保護(hù)))
中文描述: 自(自保護(hù)型場(chǎng)效應(yīng)管(帶過溫和過流保護(hù)))
文件頁數(shù): 2/6頁
文件大?。?/td> 67K
代理商: NID6002N
NID6002N
http://onsemi.com
2
MOSFET MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage Internally Clamped
V
DSS
V
GS
I
D
P
D
70
Vdc
GatetoSource Voltage
14
Vdc
Drain Current
Continuous
Internally Limited
Total Power Dissipation
@ T
A
= 25
°
C (Note 1)
@ T
A
= 25
°
C (Note 2)
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
1.3
2.5
W
R
JC
R
JA
R
JA
E
AS
3.0
95
50
°
C/W
Single Pulse DraintoSource Avalanche Energy
(V
DD
= 50 Vdc, V
GS
= 5.0 Vdc,
I
L
= 1.3 Apk, L = 160 mH, R
G
= 25 )
Operating and Storage Temperature Range
(Note 3)
143
mJ
T
J
, T
stg
55 to 150
°
C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Surface mounted onto minimum pad size (100 sq/mm) FR4 PCB, 1 oz cu.
2. Mounted onto 1
square pad size (700 sq/mm) FR4 PCB, 1 oz cu.
3. Normal prefault operating range. See thermal limit range conditions.
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