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參數(shù)資料
| 型號： | NE894M13 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON TRANSISTOR |
| 中文描述： | NPN硅晶體管 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 66K |
| 代理商： | NE894M13 |
NE894M13
NPN SILICON TRANSISTOR
NEW MINIATURE M13 PACKAGE:
– Small transistor outline
– 1.0 X 0.5 X 0.5 mm
– Low profile / 0.50 mm package height
– Flat lead style for better RF performance
IDEAL FOR > 3 GHz OSCILLATORS
LOW NOISE, HIGH GAIN
LOW C
re
UHSO 25 GHz PROCESS
FEATURES
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M13
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE OUTLINE
NE894M13
2SC5787
M13
SYMBOLS
f
T
|S
21E
|
2
|
NF
C
re
I
CBO
I
EBO
h
FE
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
≤
350
μ
s, duty cycle
≤
2 %.
3. Collector to base capacitance when the emitter is grounded
PARAMETERS AND CONDITIONS
UNITS
GHz
dB
dB
pF
nA
nA
MIN
17
11
–
–
–
–
50
TYP
20
13
1.4
0.22
–
–
–
MAX
–
–
2.5
0.30
100
100
100
Gain Bandwidth at V
CE
= 1 V, I
C
= 20 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 1 V, I
C
= 20 mA, f = 2 GHz
Noise Figure at V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz, Z
S
= Z
OPT
Reverse Transfer Capacitance
3
at V
CB
= 0.5 V, I
E
= 0 mA, f = 1 MHz
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain
2
at V
CE
= 1 V, I
C
= 5 mA
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
DESCRIPTION
The NE894M13 transistor is designed for oscillator applica-
tions above 3 GHz. The NE894M13 features low voltage, low
current operation, low noise, and high gain. NEC's new low
profile/flat lead style "M13" package is ideal for today's portable
wireless applications.
California Eastern Laboratories
1. Emitter
2. Base
3. Collector
PIN CONNECTIONS
0
+
0
0.1
0.1
0
+
0
0
0
0
+
0
+
1
+
0.5
0.05
0.7±0.05
1
2
3
B
0.3
0.2
0.2
(Bottom View)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE894M13-A | 功能描述:射頻雙極小信號晶體管 NPN Low Volt Osc RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE894M13-T3 | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans GP BJT NPN 3V 0.035A 3-Pin LeadLess Mini-Mold T/R |
| NE894M13-T3-A | 功能描述:射頻雙極小信號晶體管 NPN Low Volt Osc RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE8FAH | 功能描述:以太網(wǎng)和電信連接器 HORIZON PCB RECEPT ALL PLASTIC RoHS:否 制造商:Pulse 產(chǎn)品:Modular Jacks 性能類別: USOC 代碼:RJ45 位置/觸點(diǎn)數(shù)量: 安裝風(fēng)格:Through Hole 端口數(shù)量:1 x 1 型式:Female 屏蔽: 電流額定值: 電壓額定值: 觸點(diǎn)電鍍: 外殼材料:Thermoplastic IP 等級: |
| NE8FAH-0 | 功能描述:以太網(wǎng)和電信連接器 HORIZONTAL LATCHLESS ETHERCON A-SERIES RoHS:否 制造商:Pulse 產(chǎn)品:Modular Jacks 性能類別: USOC 代碼:RJ45 位置/觸點(diǎn)數(shù)量: 安裝風(fēng)格:Through Hole 端口數(shù)量:1 x 1 型式:Female 屏蔽: 電流額定值: 電壓額定值: 觸點(diǎn)電鍍: 外殼材料:Thermoplastic IP 等級: |
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