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參數(shù)資料
| 型號： | NE944 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON OSCILLATOR AND MIXER TRANSISTOR |
| 中文描述： | NPN硅晶體管振蕩器和混合機(jī) |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 58K |
| 代理商： | NE944 |
NPN SILICON
OSCILLATOR AND MIXER TRANSISTOR
NE944
SERIES
FEATURES
LOW COST
HIGH GAIN BANDWIDTH PRODUCT:
f
T
= 2000 MHz TYP
LOW COLLECTOR TO BASE TIME CONSTANT:
C
C
r
b'b
= 5 ps TYP
LOW FEEDBACK CAPACITANCE:
C
RE
= 0.55 pF TYP
The NE944 series of NPN silicon epitaxial bipolar transistors
is intended for use in general purpose UHF oscillator and
mixer applications. It is suitable for automotive keyless entry
and TV tuner designs.
The device features stable oscillation and small frequency
drift during changes in the supply voltage and over the
ambient temperature range.
DESCRIPTION
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE CODE
PARAMETERS AND CONDITIONS
Collector Cutoff Current, V
CB
= 12 V, I
E
= 0
DC Current Gain, V
CE
= 10 V, I
C
= 5.0 mA
Collector Saturation Voltage, I
C
= 10 mA, I
B
= 1.0 mA
Gain Bandwidth Product, V
CE
= 3 V, I
E
= 5 mA
Output Capacitance, V
CB
= 3 V, I
E
= 0 mA, f = 1.0 MHz
Collector to Base Time Constant, V
CE
= 3 V,
I
E
= -5.0 mA, f = 31.9 MHz
Feedback Capacitance, V
CB
= 10 V, I
E
= 0 mA, f = 1.0 MHz
Thermal Resistance, Junction to Case (infinite heat sink)
Thermal Resistance, Junction to Ambient (free air)
Power Dissipation
NE94430
2SC4184
30
UNITS MIN
μ
A
NE94433
2SC3545
33
TYP
SYMBOLS
I
CBO
h
FE
V
CE(sat)
f
T
C
OB
C
C
r
b'b
TYP
MAX
0.1
200
0.5
MIN
MAX
0.1
250
0.5
2.0
40
100
50
100
V
GHz
pF
1.2
2.0
0.7
1.3
1.2
ps
pF
3.5
8.0
5.0
1.0
C
RE
0.55
R
TH (J-C)
R
TH (J-A)
P
T
°
C/W
°
C/W
mW
200
833
150
200
620
150
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
Note:
1. Electronic Industrial Association of Japan.
California Eastern Laboratories
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE94430 | 功能描述:射頻雙極小信號晶體管 NPN Oscillator/Mixer RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE94430-A | 功能描述:射頻雙極小信號晶體管 NPN Silicon AMP Oscilltr Transist RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE94430-T1 | 制造商:California Eastern Laboratories (CEL) 功能描述:NPN Silicon Amplifier and Oscillator Transistor |
| NE94430-T1-A | 功能描述:射頻雙極小信號晶體管 NPN Silicon AMP Oscilltr Transist RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE94430-T2 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON OSCILLATOR AND MIXER TRANSISTOR |
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