參數(shù)資料
型號： NE664M04
廠商： NEC Corp.
英文描述： MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
中文描述： 中功率NPN硅高頻晶體管
文件頁數(shù)： 9/9頁
文件大?。?/td> 128K
代理商： NE664M04
Note:
1. Gain Calculations:
MAG =
|S
21
|
|S
12
|
K - 1
).
(
K
±
= S
11
S
22
- S
21
S
12
,
When K
≤
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =
1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
NE664M04
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
°
C)
FREQUENCY
GHz
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
4.50
5.00
5.50
6.00
6.50
7.00
7.50
8.00
8.50
9.00
9.50
10.00
10.50
11.00
11.50
12.00
S
11
S
21
S
12
S
22
K
MAG
1
(dB)
25.43
18.85
15.41
12.95
11.11
9.80
8.62
7.59
6.75
6.05
5.44
4.83
4.32
3.92
3.47
3.08
2.72
2.45
2.11
1.91
1.64
1.53
1.40
1.34
MAG
0.801
0.808
0.815
0.819
0.822
0.830
0.832
0.831
0.835
0.837
0.842
0.848
0.853
0.862
0.868
0.873
0.881
0.890
0.895
0.903
0.911
0.915
0.919
0.918
ANG
175.9
166.3
158.4
150.9
143.9
136.8
129.7
122.5
115.0
107.6
100.2
93.0
86.4
80.5
75.4
70.4
66.5
62.7
59.3
55.7
52.0
48.3
44.1
39.8
MAG
9.856
4.975
3.310
2.483
1.996
1.676
1.461
1.299
1.171
1.069
0.979
0.896
0.828
0.764
0.707
0.660
0.611
0.572
0.532
0.498
0.466
0.445
0.430
0.426
ANG
89.7
77.5
68.2
59.8
51.6
43.6
35.8
27.6
19.8
12.0
4.4
- 2.8
- 9.1
- 15.4
- 21.5
- 26.8
- 32.7
- 36.9
- 42.0
- 47.9
- 51.7
- 56.3
- 60.1
- 64.6
MAG
0.024
0.044
0.066
0.084
0.102
0.122
0.138
0.156
0.173
0.187
0.198
0.211
0.214
0.216
0.226
0.231
0.223
0.226
0.226
0.219
0.224
0.219
0.226
0.229
ANG
66.8
68.0
62.1
57.6
52.3
43.9
39.2
32.6
26.9
19.5
11.8
7.0
1.2
- 4.7
- 9.8
- 15.6
- 20.4
- 24.0
- 30.2
- 33.8
- 38.3
- 43.0
- 46.2
- 49.5
MAG
0.624
0.632
0.633
0.638
0.644
0.648
0.653
0.656
0.662
0.672
0.683
0.698
0.711
0.724
0.736
0.748
0.750
0.764
0.771
0.779
0.793
0.794
0.810
0.811
ANG
-169.4
175.5
166.7
158.1
150.8
144.1
136.7
129.3
122.1
114.9
108.2
102.1
96.2
90.6
85.1
78.9
72.7
67.2
61.0
55.0
48.9
45.8
41.6
39.3
NE664M04
V
C
= 3 V, I
C
= 200 mA
1.01
1.07
1.07
1.08
1.09
1.07
1.07
1.07
1.07
1.06
1.06
1.06
1.06
1.06
1.06
1.06
1.07
1.07
1.07
1.07
1.06
1.06
1.05
1.05
j50
j25
j10
0
10
25
-j10
-j25
-j50
-j100
j100
0
50
100
S
22
S
11
0.200 to 12.000GHz by 0.100
120
90
60
30
150
180
-150
-120
-90
-60
-30
0
0.200 to 12.000GHz by 0.100
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
04/04/2003
相關PDF資料
PDF描述
NE664M04-T2 MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
NE677M04 NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
NE677M04-T2 NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68035 NONLINEAR MODEL
NE68119 NONLINEAR MODEL
相關代理商/技術參數(shù)
參數(shù)描述
NE664M04-A 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
NE664M04-EVPW09 功能描述:放大器 IC 開發(fā)工具 For NE664M04-A Power at 900 MHz RoHS:否 制造商:International Rectifier 產(chǎn)品:Demonstration Boards 類型:Power Amplifiers 工具用于評估:IR4302 工作電源電壓:13 V to 23 V
NE664M04-EVPW09-A 制造商:California Eastern Laboratories (CEL) 功能描述:NPN SILICON MEDIUM POWER TRANSISTOR - Boxed Product (Development Kits)
NE664M04-EVPW24 功能描述:放大器 IC 開發(fā)工具 For NE664M04-A Power at 2.4 GHz RoHS:否 制造商:International Rectifier 產(chǎn)品:Demonstration Boards 類型:Power Amplifiers 工具用于評估:IR4302 工作電源電壓:13 V to 23 V
NE664M04-T2 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
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