參數(shù)資料
型號(hào): NE664M04
廠商: NEC Corp.
英文描述: MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
中文描述: 中功率NPN硅高頻晶體管
文件頁(yè)數(shù): 3/9頁(yè)
文件大小: 128K
代理商: NE664M04
NE664M04
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°
C)
Ambient Temperature, T
A
(
o
C)
T
t
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Collector to Emitter Voltage, V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector to Base Voltage, V
CB
(V)
R
r
(
REVERSE TRANSFER CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
C
C
Base to Emitter Voltage, V
BE
(V)
C
C
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Collector Current, I
C
(mA)
D
F
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Mounted on Polyimide PCB
(38 x 38 mm, t = 0.4 mm)
200
735
1000
600
800
400
0
25
50
75
100
125
150
Stand alone device
in free air
f = 1 MHz
2.0
1.5
1.0
0.5
0
1
2
3
4
5
1000
100
10
1
0.1
0.01
0.5
0.6
0.7
0.8
0.9
1.0
0.001
V
CE
= 3 V
I
B
: 0.5 mA step
I
B
= 0.5 mA
5
450
400
350
300
250
200
150
100
50
0
1
2
3
4
6
7 mA
6 mA
1 mA
2 mA
3 mA
4 mA
5 mA
1000
100
10
1
10
100
1000
V
CE
= 3 V
相關(guān)PDF資料
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NE664M04-EVPW09 功能描述:放大器 IC 開發(fā)工具 For NE664M04-A Power at 900 MHz RoHS:否 制造商:International Rectifier 產(chǎn)品:Demonstration Boards 類型:Power Amplifiers 工具用于評(píng)估:IR4302 工作電源電壓:13 V to 23 V
NE664M04-EVPW09-A 制造商:California Eastern Laboratories (CEL) 功能描述:NPN SILICON MEDIUM POWER TRANSISTOR - Boxed Product (Development Kits)
NE664M04-EVPW24 功能描述:放大器 IC 開發(fā)工具 For NE664M04-A Power at 2.4 GHz RoHS:否 制造商:International Rectifier 產(chǎn)品:Demonstration Boards 類型:Power Amplifiers 工具用于評(píng)估:IR4302 工作電源電壓:13 V to 23 V
NE664M04-T2 功能描述:射頻雙極小信號(hào)晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel