參數(shù)資料
型號(hào)： NE677M04
廠商： Electronic Theatre Controls, Inc.
英文描述： NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
中文描述： 鄰舍中功率NPN硅高頻晶體管
文件頁(yè)數(shù)： 1/7頁(yè)
文件大?。?/td> 62K
代理商： NE677M04
NE677M04
NEC's MEDIUM POWER
NPN SILICON HIGH FREQUENCY
TRANSISTOR
R
2.05±0.1
1.25±0.1
3
1
1
4
2
0
1
2
+0.30
+0.01
-0.05
0
+
+
-
(leads 1, 3 and ,4)
0
+
+
-
PIN CONNECTIONS
1. Emitter
2. Collector
3. Emitter
4. Base
Notes:
1. Pulsed measurement, pulse width
≤
350
μ
s, duty cycle
≤
2 %.
2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the
guard pin of capacitance meter.
3. Electronic Industrail Association of Japan
4.
DESCRIPTION
NEC's NE677M04 is fabricated using NEC's HFT3 wafer
process. With a transition frequency of 15 GHz, the NE677M04
is usable in applications from 100 MHz to 3 GHz. The NE677M04
provides P1dB of 15 dBm, even with low voltage and low
current, making this device an excellent choice for the driver
stage for mobile or fixed wireless applications.
NEC's NE677M04 is housed in NEC's new low profile/flat lead
style "M04" package
HIGH GAIN BANDWIDTH:
f
T
= 15 GHz
HIGH OUTPUT POWER:
P
-1dB
= 15 dBm at 1.8 GHz
HIGH LINEAR GAIN:
G
L
= 15.5 dB at 1.8 GHz
NEW LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
FEATURES
PART NUMBER
PACKAGE OUTLINE
EIAJ
3
REGISTRATION NUMBER
NE677M04
M04
2SC5751
SYMBOLS
I
CBO
I
EBO
h
FE
P
1dB
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current
1
Gain at V
CE
= 3 V, I
C
= 20 mA
Output Power at 1 dB compression point at V
CE
= 2.8 V, I
CQ
= 8 mA,
f = 1.8 GHz, P
in
= 1 dBm
Linear Gain at V
CE
= 2.8 V, I
CQ
= 8 mA, f = 1.8 GHz, P
in
= -10 dBm
Maximum Available Gain
4
at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Collector Efficiency at V
CE
= 2.8 V, I
CQ
= 8 mA, f = 1.8 GHz,
P
in
= 1 dBm
Noise Figure at V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz, Zs =Z
OPT
Gain Bandwidth at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Reverse Transfer Capacitance
2
at V
CB
= 3 V, I
C
= 0, f = 1 MHz
UNITS
nA
nA
MIN
TYP
MAX
100
100
150
75
120
15.0
dBm
G
L
MAG
|S
21E
|
2
dB
dBm
dB
%
15.5
16.0
13.5
50
10.0
η
c
NF
f
T
Cre
dB
GHz
pF
1.7
15
0.22
2.5
0.50
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
D
R
California Eastern Laboratories
MAG =
|S
21
|
|S
12
|
K - 1
).
(
K ±
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參數(shù)描述
NE677M04-A 功能描述:射頻雙極小信號(hào)晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
NE677M04-T2 功能描述:射頻雙極小信號(hào)晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
NE677M04-T2-A 功能描述:射頻雙極小信號(hào)晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
NE678M04 功能描述:射頻雙極小信號(hào)晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
NE678M04-A 功能描述:射頻雙極小信號(hào)晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
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