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參數(shù)資料
| 型號： | NE6500379A |
| 廠商： | NEC Corp. |
| 英文描述： | 3W L, S-BAND POWER GaAs MESFET |
| 中文描述： | 3W升，S波段功率GaAs MESFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 88K |
| 代理商： | NE6500379A |
The information in this document is subject to change without notice.
N-CHANNEL GaAs MES FET
NE6500379A
3W L, S-BAND POWER GaAs MESFET
1998
Document No. P13495EJ2V0DS00 (2nd edition)
Date Published August 1998 N CP(K)
Printed in Japan
DATA SHEET
The mark shows major revised points.
DESCRIPTION
The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile
communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high
linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC’s
stringent quality and control procedures.
FEATURES
High Output Power
High Linear Gain
High Power Added Efficiency: 50% typ. @V
DS
= 6 V, I
Dset
= 500 mA, f = 1.9 GHz
: P
o (1dB)
= +35 dBm typ.
: 10 dB typ.
ORDERING INFORMATION
Part Number
Package
Supplying Form
NE6500379A-T1
79A
12 mm tape width, 1 kpcs/reel
Remark
To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NE6500379A)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
V
DS
15
V
Gate to Source Voltage
V
GSO
–7
V
Drain Current
I
D
5.6
A
Gate Current
I
G
50
mA
Total Power Dissipation
P
T
21
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
–65 to +150
°C
Caution
Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE6500379A-EVPW26 | 功能描述:射頻GaAs晶體管 For NE6500379A 2.6G RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE6500379A-T1 | 功能描述:射頻GaAs晶體管 L&S Band GaAs MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE6500379A-T1-A | 制造商:Renesas Electronics Corporation 功能描述:RF POWER TRANSISTOR MESFET 制造商:Renesas 功能描述:NE6500379A-T1-A |
| NE6500496 | 功能描述:射頻GaAs晶體管 L&S Band GaAs MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE6500496_00 | 制造商:NEC 制造商全稱:NEC 功能描述:L&S BAND MEDIUM POWER GaAs MESFET |
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