參數(shù)資料
型號: NDS9947
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Dual P-Channel Enhancement Mode Field Effect Transistor
中文描述: 3.5 A, 20 V, 0.1 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
封裝: SO-8
文件頁數(shù): 2/10頁
文件大?。?/td> 342K
代理商: NDS9947
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 μA
-20
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -16 V, V
GS
= 0 V
-1
μA
T
J
= 55°C
-10
μA
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
100
nA
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 μA
-1
-2.2
-3
V
T
J
= 125°C
-0.8
-1.9
-2.5
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -10 V, I
D
= -3.5 A
0.08
0.1
T
J
= 125°C
0.11
0.16
V
GS
= -4.5 V, I
D
= -1 A
V
GS
= -10 V, V
DS
= -5 V
V
DS
= -15 V, I
D
= -3.5 A
0.165
0.19
I
D(on)
g
FS
DYNAMIC CHARACTERISTICS
On-State Drain Current
-14
A
Forward Transconductance
5
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
785
pF
Output Capacitance
500
pF
Reverse Transfer Capacitance
245
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Turn - On Delay Time
V
DD
= -10 V, I
D
= -1 A,
V
GEN
= -10 V, R
GEN
= 6
9
40
ns
Turn - On Rise Time
17
25
ns
Turn - Off Delay Time
26
30
ns
Turn - Off Fall Time
13
20
ns
Total Gate Charge
V
= -10 V,
I
D
= -3.5 A, V
GS
= -10 V
19
30
nC
Gate-Source Charge
6
nC
Gate-Drain Charge
12
nC
NDS9947.SAM
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