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參數(shù)資料
| 型號(hào)： | NDS8435 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Single P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 7000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 330K |
| 代理商： | NDS8435 |
NDS8435 Rev. B2
-30
-25
-20
-15
-10
I , DRAIN CURRENT (A)
-5
0
0
5
10
15
20
25
g
J
25°C
125°C
V = -10V
F
Figure 13. Transconductance Variation with Drain
Current and Temperature.
Figure 16. Maximum Safe Operating Area.
Typical Electrical and Thermal Characteristics
(continued)
0
0.2
0.4
0.6
0.8
1
4
5
6
7
8
2oz COPPER MOUNTING PAD AREA (in )
-
2
1c
1b
1a
4.5"x5" FR-4 Board
o
T = 25 C
Still Air
V = -10V
D
0
0.2
2oz COPPER MOUNTING PAD AREA (in )
0.4
0.6
0.8
2
1
0.5
1
1.5
2
2.5
S
1c
1b
1a
4.5"x5" FR-4 Board
o
T = 25 C
Still Air
0.1
0.2
0.5
- V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
30
50
0.01
0.03
0.1
0.3
1
3
10
30
50
-
D
RDS(ON) LIMIT
V = -10V
SINGLE PULSE
R = See Note 1c
T = 25°C
100ms
1s
10s
DC
10ms
1ms
100us
Figure 14. SO-8 Maximum Steady-State Power
Dissipation versus Copper Mounting Pad Area.
Figure 15. Maximum Steady-State Drain
Current versus Copper Mounting Pad
Area.
Figure 17. Transient Thermal Response Curve
.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R = See Note 1c
T - T = P * R (t)
P(pk)
t
1
t
2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDS8435A | 功能描述:MOSFET Single P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS8435A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SO-8 |
| NDS8435A_Q | 功能描述:MOSFET Single P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS8839H | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS8852H | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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