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參數(shù)資料
| 型號： | NDS8435 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Single P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 7000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 330K |
| 代理商： | NDS8435 |
NDS8435 Rev. B2
-3
-2.5
-2
-1.5
-1
-0.5
0
-30
-25
-20
-15
-10
-5
0
V , DRAIN-SOURCE VOLTAGE (V)
I
D
V = -10V
-3.0
-2.5
-6.0
-3.5
-4.5
-5.0
-4.0
-30
-25
-20
-15
-10
I , DRAIN CURRENT (A)
-5
0
0.5
1
1.5
2
2.5
3
D
R
D
V = -3.0V
-10
-4.0
-5.0
-6.0
-4.5
-3.5
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
Typical Electrical Characteristics
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
D
V = -10V
I =-7.0A
R
D
-30
-25
-20
-15
-10
I , DRAIN CURRENT (A)
-5
0
0.5
1
1.5
2
D
TJ
25°C
-55°C
V = -10V
R
D
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Drain Current and Temperature.
-6
-5
-4
-3
-2
-1
-20
-16
-12
-8
-4
0
V , GATE TO SOURCE VOLTAGE (V)
I
D
V = -10V
TJ
25°C
125°C
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.7
0.8
0.9
1
1.1
1.2
G
I = -250μA
V = V
GS
V
t
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation
with Temperature.
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| NDS8926 | Dual N-Channel Enhancement Mode Field Effect Transistor |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NDS8435A | 功能描述:MOSFET Single P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS8435A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SO-8 |
| NDS8435A_Q | 功能描述:MOSFET Single P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS8839H | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS8852H | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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