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參數(shù)資料
| 型號： | NDS8435 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Single P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 7000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 330K |
| 代理商： | NDS8435 |
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 μA
-30
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -24 V, V
GS
= 0 V
-1
μA
T
J
= 55°C
-10
μA
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
100
nA
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 μA
-1
-1.5
-3
V
T
J
= 125°C
-0.7
-1.1
-2.2
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -10 V, I
D
= -7.0 A
0.023
0.028
T
J
= 125°C
0.038
0.06
V
GS
= -4.5 V, I
D
= -5.8 A
V
GS
= -10 V, V
DS
= -5 V
V
GS
= -4.5, V
DS
= -5 V
V
DS
= -10 V, I
D
= -7.0 A
0.037
0.045
I
D(on)
On-State Drain Current
-25
A
-10
g
FS
DYNAMIC CHARACTERISTICS
Forward Transconductance
10
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= -15 V, V
GS
= 0 V,
f = 1.0 MHz
1500
pF
Output Capacitance
950
pF
Reverse Transfer Capacitance
370
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Turn - On Delay Time
V
DD
= -10 V, I
D
= -1 A,
V
GEN
= -10 V, R
GEN
= 6
12
30
ns
Turn - On Rise Time
18
30
ns
Turn - Off Delay Time
65
120
ns
Turn - Off Fall Time
49
80
ns
Total Gate Charge
V
= -15 V,
I
D
= -7.0 A, V
GS
= -10 V
47
60
nC
Gate-Source Charge
5.5
nC
Gate-Drain Charge
14
nC
NDS8435 Rev. B2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDS8435A | 功能描述:MOSFET Single P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS8435A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SO-8 |
| NDS8435A_Q | 功能描述:MOSFET Single P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS8839H | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS8852H | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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