參數(shù)資料
型號(hào)： NDS8435
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： Single P-Channel Enhancement Mode Field Effect Transistor
中文描述： 7000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁數(shù)： 1/10頁
文件大?。?/td> 330K
代理商： NDS8435
May 1996
NDS8435
Single P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
___________________________________________________________________________________________
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
NDS8435
Units
V
DSS
Drain-Source Voltage
-30
V
V
GSS
Gate-Source Voltage
-20
V
I
D
Drain Current - Continuous
(Note 1a)
-7
A
- Pulsed
-25
P
D
Maximum Power Dissipation
(Note 1a)
2.5
W
(Note 1b)
1.2
(Note 1c)
1
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
NDS8435 Rev. B2
SO-8 P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications
such
as
notebook
management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
computer
power
-7A, -30V. R
DS(ON)
= 0.028
@ V
GS
= -10V
R
DS(ON)
= 0.045
@ V
GS
= -4.5V.
High density cell design for extremely low R
DS(ON).
High power and current handling capability in a widely used
surface mount package.
5
6
7
8
4
3
2
1
1997 Fairchild Semiconductor Corporation
相關(guān)PDF資料
PDF描述
NDS8839H Complementary MOSFET Half Bridge
NDS8852H Complementary MOSFET Half Bridge
NDS8858H Complementry MOSFET Half Bridge
NDS8926 Dual N-Channel Enhancement Mode Field Effect Transistor
NDS8928 Dual N & P-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDS8435A 功能描述:MOSFET Single P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS8435A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SO-8
NDS8435A_Q 功能描述:MOSFET Single P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS8839H 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS8852H 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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