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參數(shù)資料
| 型號： | NDS351N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.1A，30V，0.25Ω）(N溝道邏輯增強型MOS場效應管（漏電流1.1A, 漏源電壓30V，導通電阻0.25Ω）) |
| 中文描述： | 1100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-3 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 75K |
| 代理商： | NDS351N |
March 1996
NDS351N
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
________________________________________________________________________________
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
NDS351N
Units
V
DSS
V
GSS
Drain-Source Voltage
30
V
Gate-Source Voltage - Continuous
20
V
I
D
Maximum Drain Current - Continuous
(Note 1a)
± 1.1
A
- Pulsed
± 10
P
D
Maximum Power Dissipation
(Note 1a)
0.5
W
(Note 1b)
0.46
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
250
°C/W
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1)
75
°C/W
NDS351N Rev. E2
1.1A, 30V. R
DS(ON)
= 0.25
@ V
GS
= 4.5V.
Proprietary package design using copper lead frame for
superior thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
Compact industry standard SOT-23 surface mount
package.
D
S
G
These N-Channel logic level enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance. These devices are
particularly suited for low voltage applications in notebook
computers, portable phones, PCMCIA cards, and other
battery powered circuits where fast switching, and low
in-line power loss are needed in a very small outline
surface mount package.
1997 Fairchild Semiconductor Corporation
相關PDF資料 |
PDF描述 |
|---|---|
| NDS352AP | P-Channel Logic Level Enhancement Mode Field Effect Transistor（-0.9A，-30V，0.5Ω）(P溝道邏輯增強型MOS場效應管（漏電流-0.9A, 漏源電壓-30V，導通電阻0.5Ω）) |
| NDS352P | P-Channel Logic Level Enhancement Mode Field Effect Transistor（-0.85A，-20V，0.5Ω）(P溝道邏輯增強型MOS場效應管（漏電流-0.85A, 漏源電壓-20V，導通電阻0.5Ω）) |
| NDS355AN | N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.7A，30V，0.125Ω）(N溝道邏輯增強型MOS場效應管（漏電流1.7A, 漏源電壓30V，導通電阻0.125Ω）) |
| NDS355N | N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.6A，30V，0.125Ω）(N溝道邏輯增強型MOS場效應管（漏電流1.6A, 漏源電壓30V，導通電阻0.125Ω）) |
| NDS356AP | P-Channel Logic Level Enhancement Mode Field Effect Transistor（-1.1A，-30V，0.3Ω）(P溝道邏輯增強型MOS場效應管（漏電流-1.1A, 漏源電壓-30V，導通電阻0.3Ω）) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NDS351N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
| NDS352AP | 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS352AP | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23 |
| NDS352AP | 制造商:Fairchild Semiconductor Corporation 功能描述:30V SSOT-3 PCH |
| NDS352AP_D87Z | 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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