參數(shù)資料
型號： NDS351N
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.1A，30V，0.25Ω）(N溝道邏輯增強(qiáng)型MOS場效應(yīng)管（漏電流1.1A, 漏源電壓30V，導(dǎo)通電阻0.25Ω）)
中文描述： 1100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SUPERSOT-3
文件頁數(shù)： 2/6頁
文件大小： 75K
代理商： NDS351N
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
V
DS
= 24 V, V
GS
= 0 V
30
V
Zero Gate Voltage Drain Current
1
μA
T
J
=125°C
10
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
V
GS
= 12 V, V
DS
= 0 V
V
GS
= -12 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
0.8
1.6
2
V
T
J
=125°C
0.5
1.3
1.5
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 4.5 V, I
D
= 1.1 A
0.185
0.25
T
J
=125°C
0.26
0.37
V
GS
= 10 V, I
D
= 1.4 A
V
GS
= 4.5 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 1.1 A
0.135
0.16
I
D(ON)
g
FS
DYNAMIC CHARACTERISTICS
On-State Drain Current
5
A
Forward Transconductance
2.5
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
140
pF
Output Capacitance
80
pF
Reverse Transfer Capacitance
18
pF
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn - On Delay Time
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 50
9
15
ns
Turn - On Rise Time
16
30
ns
Turn - Off Delay Time
26
50
ns
Turn - Off Fall Time
19
40
ns
Total Gate Charge
V
DS
= 10 V, I
D
= 1.1 A,
V
GS
= 5 V
2
3.5
nC
Gate-Source Charge
1
nC
Gate-Drain Charge
2
nC
NDS351N Rev. E2
相關(guān)PDF資料
PDF描述
NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor（-0.9A，-30V，0.5Ω）(P溝道邏輯增強(qiáng)型MOS場效應(yīng)管（漏電流-0.9A, 漏源電壓-30V，導(dǎo)通電阻0.5Ω）)
NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor（-0.85A，-20V，0.5Ω）(P溝道邏輯增強(qiáng)型MOS場效應(yīng)管（漏電流-0.85A, 漏源電壓-20V，導(dǎo)通電阻0.5Ω）)
NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.7A，30V，0.125Ω）(N溝道邏輯增強(qiáng)型MOS場效應(yīng)管（漏電流1.7A, 漏源電壓30V，導(dǎo)通電阻0.125Ω）)
NDS355N N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.6A，30V，0.125Ω）(N溝道邏輯增強(qiáng)型MOS場效應(yīng)管（漏電流1.6A, 漏源電壓30V，導(dǎo)通電阻0.125Ω）)
NDS356AP P-Channel Logic Level Enhancement Mode Field Effect Transistor（-1.1A，-30V，0.3Ω）(P溝道邏輯增強(qiáng)型MOS場效應(yīng)管（漏電流-1.1A, 漏源電壓-30V，導(dǎo)通電阻0.3Ω）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDS351N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23
NDS352AP 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS352AP 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23
NDS352AP 制造商:Fairchild Semiconductor Corporation 功能描述:30V SSOT-3 PCH
NDS352AP_D87Z 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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