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參數(shù)資料
| 型號： | NDS351N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.1A，30V，0.25Ω）(N溝道邏輯增強(qiáng)型MOS場效應(yīng)管（漏電流1.1A, 漏源電壓30V，導(dǎo)通電阻0.25Ω）) |
| 中文描述： | 1100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-3 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 75K |
| 代理商： | NDS351N |
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
I
SM
V
SD
Maximum Continuous Drain-Source Diode Forward Current
0.6
A
Maximum Pulsed Drain-Source Diode Forward Current
5
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 1.1 A
(Note 2)
0.8
1.2
V
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
P
D
(
t
) =
T
J
T
A
R
θ
J A
(
t
)
=
T
J
T
A
R
θ
J C
+
R
θ
CA
(
t
)
=
I
D
2
(
t
)×
R
DS
(
ON
)
T
J
Typical R
θ
JA
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 250
o
C/W when mounted on a 0.02 in
2
pad of 2oz cpper.
b. 270
o
C/W when mounted on a 0.001 in
2
pad of 2oz cpper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
NDS351N Rev. E2
1a
1b
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDS352AP | P-Channel Logic Level Enhancement Mode Field Effect Transistor（-0.9A，-30V，0.5Ω）(P溝道邏輯增強(qiáng)型MOS場效應(yīng)管（漏電流-0.9A, 漏源電壓-30V，導(dǎo)通電阻0.5Ω）) |
| NDS352P | P-Channel Logic Level Enhancement Mode Field Effect Transistor（-0.85A，-20V，0.5Ω）(P溝道邏輯增強(qiáng)型MOS場效應(yīng)管（漏電流-0.85A, 漏源電壓-20V，導(dǎo)通電阻0.5Ω）) |
| NDS355AN | N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.7A，30V，0.125Ω）(N溝道邏輯增強(qiáng)型MOS場效應(yīng)管（漏電流1.7A, 漏源電壓30V，導(dǎo)通電阻0.125Ω）) |
| NDS355N | N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.6A，30V，0.125Ω）(N溝道邏輯增強(qiáng)型MOS場效應(yīng)管（漏電流1.6A, 漏源電壓30V，導(dǎo)通電阻0.125Ω）) |
| NDS356AP | P-Channel Logic Level Enhancement Mode Field Effect Transistor（-1.1A，-30V，0.3Ω）(P溝道邏輯增強(qiáng)型MOS場效應(yīng)管（漏電流-1.1A, 漏源電壓-30V，導(dǎo)通電阻0.3Ω）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDS351N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
| NDS352AP | 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS352AP | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23 |
| NDS352AP | 制造商:Fairchild Semiconductor Corporation 功能描述:30V SSOT-3 PCH |
| NDS352AP_D87Z | 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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