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參數(shù)資料
| 型號： | NDS336 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | P溝道增強模式的邏輯電平場效應晶體管 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大小： | 77K |
| 代理商： | NDS336 |
NDS336P Rev. D
Figure 14. Maximum Safe Operating Area.
Typical Electrical Characteristics
(continued)
Figure 17. Transient Thermal Response Curve.
Note : Characterization performed using the conditions described in note 1b. Transient thermal response will
change depending on the circuit board design.
-10
-8
-6
-4
-2
0
0
2
4
6
8
I , DRAIN CURRENT (A)
g
-25°C
F
V = -5V
-125°C
T = -55°C
0.1
0.2
0.5
1
2
5
10
20
30
0.01
0.05
0.1
0.5
1
2
5
10
20
-V , DRAIN-SOURCE VOLTAGE (V)
-
D
RDS(ON) LIMIT
V = -2.7V
SINGLE PULSE
R = See Note 1b
T = 25°C
1s
100ms
100us
1ms
DC
10ms
0
0.1
0.2
0.3
0.4
0.8
1
1.2
1.4
1.6
2oz COPPER MOUNTING PAD AREA (in )
-
D
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
V = -2.7V
A
0
0.1
0.2
0.3
0.4
0
0.2
0.4
0.6
0.8
1
2oz COPPER MOUNTING PAD AREA (in )
S
2
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
A
Figure 15. SuperSOT
TM _
3 Maximum
Steady-State Power Dissipation versus
Copper Mounting Pad Area.
Figure 13. Transconductance Variation with
Drain Current and Temperature
.
Figure 16. Maximum Steady-State Drain
Current versus Copper Mounting Pad Area
.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
Duty Cycle, D = t /t
2
R (t) = r(t) * R
R = See Note 1b
T - T = P * R JA
P(pk)
t
1
t
2
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
相關PDF資料 |
PDF描述 |
|---|---|
| NDS351AN | N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.2A，30V，0.25Ω）(N溝道邏輯增強型MOS場效應管（漏電流1.2A, 漏源電壓30V，導通電阻0.25Ω）) |
| NDS351N | N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.1A，30V，0.25Ω）(N溝道邏輯增強型MOS場效應管（漏電流1.1A, 漏源電壓30V，導通電阻0.25Ω）) |
| NDS352AP | P-Channel Logic Level Enhancement Mode Field Effect Transistor（-0.9A，-30V，0.5Ω）(P溝道邏輯增強型MOS場效應管（漏電流-0.9A, 漏源電壓-30V，導通電阻0.5Ω）) |
| NDS352P | P-Channel Logic Level Enhancement Mode Field Effect Transistor（-0.85A，-20V，0.5Ω）(P溝道邏輯增強型MOS場效應管（漏電流-0.85A, 漏源電壓-20V，導通電阻0.5Ω）) |
| NDS355AN | N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.7A，30V，0.125Ω）(N溝道邏輯增強型MOS場效應管（漏電流1.7A, 漏源電壓30V，導通電阻0.125Ω）) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NDS336P | 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS336P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23 |
| NDS336P_D87Z | 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS351AN | 功能描述:MOSFET SOT-23 N-CH LOGIC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS351AN | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
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