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參數(shù)資料
| 型號： | NDS336 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | P溝道增強(qiáng)模式的邏輯電平場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 77K |
| 代理商： | NDS336 |
June 1997
NDS336P
P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
________________________________________________________________________________
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
NDS336P
Units
V
DSS
Drain-Source Voltage
-20
V
V
GSS
I
D
Gate-Source Voltage - Continuous
±8
V
Maximum Drain Current - Continuous
(Note 1a)
-1.2
A
- Pulsed
-10
P
D
Maximum Power Dissipation
(Note 1a)
0.5
W
(Note 1b)
0.46
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
J A
R
θ
J C
Thermal Resistance, Junction-to-Ambient
(Note 1a)
250
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
75
°C/W
NDS336P Rev. E
SuperSOT
TM
-3 P-Channel logic level enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very high
density process is especially tailored to minimize on-state
resistance. These devices are particularly suited for low voltage
applications such as notebook computer power management,
portable electronics, and other battery powered circuits where
fast high-side switching, and low in-line power loss are needed
in a very small outline surface mount package.
-1.2 A, -20 V, R
DS(ON)
= 0.27
@ V
GS
= -2.7 V
R
DS(ON)
= 0.2
@ V
GS
= -4.5 V.
Very low level gate drive requirements allowing direct
operation in 3V circuits. V
GS(th)
< 1.0V.
Proprietary package design using copper lead frame for
superior thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
Compact industry standard SOT-23 surface Mount
package.
D
S
G
1997 Fairchild Semiconductor Corporation
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| NDS351AN | N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.2A，30V，0.25Ω）(N溝道邏輯增強(qiáng)型MOS場效應(yīng)管（漏電流1.2A, 漏源電壓30V，導(dǎo)通電阻0.25Ω）) |
| NDS351N | N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.1A，30V，0.25Ω）(N溝道邏輯增強(qiáng)型MOS場效應(yīng)管（漏電流1.1A, 漏源電壓30V，導(dǎo)通電阻0.25Ω）) |
| NDS352AP | P-Channel Logic Level Enhancement Mode Field Effect Transistor（-0.9A，-30V，0.5Ω）(P溝道邏輯增強(qiáng)型MOS場效應(yīng)管（漏電流-0.9A, 漏源電壓-30V，導(dǎo)通電阻0.5Ω）) |
| NDS352P | P-Channel Logic Level Enhancement Mode Field Effect Transistor（-0.85A，-20V，0.5Ω）(P溝道邏輯增強(qiáng)型MOS場效應(yīng)管（漏電流-0.85A, 漏源電壓-20V，導(dǎo)通電阻0.5Ω）) |
| NDS355AN | N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.7A，30V，0.125Ω）(N溝道邏輯增強(qiáng)型MOS場效應(yīng)管（漏電流1.7A, 漏源電壓30V，導(dǎo)通電阻0.125Ω）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDS336P | 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS336P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23 |
| NDS336P_D87Z | 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS351AN | 功能描述:MOSFET SOT-23 N-CH LOGIC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS351AN | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
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