參數(shù)資料
型號： NDS336
廠商： Fairchild Semiconductor Corporation
英文描述： P-Channel Logic Level Enhancement Mode Field Effect Transistor
中文描述： P溝道增強(qiáng)模式的邏輯電平場效應(yīng)晶體管
文件頁數(shù)： 2/6頁
文件大小： 77K
代理商： NDS336
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 μA
V
DS
= -16 V, V
GS
= 0 V
-20
V
Zero Gate Voltage Drain Current
-1
μA
T
J
=55°C
-10
μA
I
GSS
I
GSS
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage Current
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
100
nA
Gate - Body Leakage Current
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 μA
-0.5
-0.78
-1
V
T
J
=125°C
-0.3
-0.58
-0.8
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -2.7 V, I
D
= -1.2 A
0.22
0.27
T
J
=125°C
0.34
0.49
V
GS
= -4.5 V, I
D
= -1.3 A
V
GS
= -2.7 V, V
DS
= -5 V
V
DS
= -5 V, I
D
= -1.2 A
0.16
0.2
I
D(ON)
g
FS
DYNAMIC CHARACTERISTICS
On-State Drain Current
-2
A
Forward Transconductance
-3
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
360
pF
Output Capacitance
170
pF
Reverse Transfer Capacitance
60
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Turn - On Delay Time
V
DD
= -5 V, I
D
= -1 A,
V
GS
= -4.5 V, R
GEN
= 6
8
15
ns
Turn - On Rise Time
29
50
ns
Turn - Off Delay Time
33
60
ns
Turn - Off Fall Time
23
45
ns
Total Gate Charge
V
DS
= -10 V, I
D
= -1.2 A,
V
GS
= -4.5 V
5.7
8.5
nC
Gate-Source Charge
0.7
nC
Gate-Drain Charge
1.8
nC
NDS336P Rev. E
相關(guān)PDF資料
PDF描述
NDS351AN N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.2A，30V，0.25Ω）(N溝道邏輯增強(qiáng)型MOS場效應(yīng)管（漏電流1.2A, 漏源電壓30V，導(dǎo)通電阻0.25Ω）)
NDS351N N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.1A，30V，0.25Ω）(N溝道邏輯增強(qiáng)型MOS場效應(yīng)管（漏電流1.1A, 漏源電壓30V，導(dǎo)通電阻0.25Ω）)
NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor（-0.9A，-30V，0.5Ω）(P溝道邏輯增強(qiáng)型MOS場效應(yīng)管（漏電流-0.9A, 漏源電壓-30V，導(dǎo)通電阻0.5Ω）)
NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor（-0.85A，-20V，0.5Ω）(P溝道邏輯增強(qiáng)型MOS場效應(yīng)管（漏電流-0.85A, 漏源電壓-20V，導(dǎo)通電阻0.5Ω）)
NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.7A，30V，0.125Ω）(N溝道邏輯增強(qiáng)型MOS場效應(yīng)管（漏電流1.7A, 漏源電壓30V，導(dǎo)通電阻0.125Ω）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDS336P 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS336P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23
NDS336P_D87Z 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS351AN 功能描述:MOSFET SOT-23 N-CH LOGIC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS351AN 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23
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