參數資料
型號: NDP6020P
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: P-Channel Logic Level Enhancement Mode Field Effect Transistor
中文描述: 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220, 3 PIN
文件頁數: 6/6頁
文件大小: 62K
代理商: NDP6020P
NDP6020P Rev.C1
-25
-20
-15
-10
-5
0
0
6
12
18
24
30
I , DRAIN CURRENT (A)
g
TJ
25°C
F
V = - 5V
DS
125°C
Figure 13. Transconductance Variation with Drain
Current and Temperature
.
Figure 14. Maximum Safe Operating Area
.
Figure 15. Transient Thermal Response Curve.
Typical Electrical Characteristics
(continued)
1
2
5
10
20
30
1
2
3
5
10
30
60
100
- V , DRAIN-SOURCE VOLTAGE (V)
-
D
RDS(ON) LIMIT
A
DC
100ms
10ms
1ms
V = -4.5V
SINGLE PULSE
R = 2.5 °C/W
T = 25°C
1μs
0.01
0.1
1
10
100
1000
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1
t ,TIME (m s)
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.2
Duty Cycle, D = t /t
2
R JC
R JC
T - T = P * R (t)
P(pk)
t
1
t
2
r
0.01
相關PDF資料
PDF描述
NDB6020 N-Channel Enhancement Mode Field Effect Transistor(35A,20V,0.023Ω)(N溝道增強型MOS場效應管(漏電流35A, 漏源電壓20V,導通電阻0.023Ω))
NDP6020 N-Channel Logic Level Enhancement Mode Field Effect Transistor
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NDB6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor(-30A,-30V,0.042Ω)(P溝道邏輯增強型MOS場效應管(漏電流-30A, 漏源電壓-30V,導通電阻0.042Ω))
NDB6050L N-Channel Logic Level Enhancement Mode Field Effect Transistor
相關代理商/技術參數
參數描述
NDP6020P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P TO-220
NDP6020P_Q 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDP6030 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDP6030L 功能描述:MOSFET N-Channel FET LL Enhancement RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDP6030PL 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube