參數(shù)資料
型號(hào)： NDP6020P
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： P-Channel Logic Level Enhancement Mode Field Effect Transistor
中文描述： 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220, 3 PIN
文件頁(yè)數(shù)： 2/6頁(yè)
文件大小： 62K
代理商： NDP6020P
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 μA
V
DS
= -16 V, V
GS
= 0 V
-20
V
Zero Gate Voltage Drain Current
-1
μA
T
J
= 55°C
-10
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 1)
Gate - Body Leakage, Forward
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 μA
-0.4
-0.7
-1
V
T
J
= 125°C
-0.3
-0.56
-0.7
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -4.5 V, I
D
= -12 A
0.041
0.05
T
J
= 125°C
0.06
0.08
R
DS(ON)
R
DS(ON)
I
D(on)
g
FS
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 1)
Static Drain-Source On-Resistance
V
GS
= -2.7 V, I
D
= -10 A
V
GS
= -2.5 V, I
D
= -10 A
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= -5 V, I
D
= -12 A
0.059
0.07
Static Drain-Source On-Resistance
0.064
0.075
On-State Drain Current
-24
A
Forward Transconductance
14
S
V
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
1590
pF
725
pF
215
pF
t
D(on)
Turn - On Delay Time
V
DD
= -20 V, I
D
= -3 A,
V
GS
= -5 V, R
GEN
= 6
15
30
nS
t
r
t
D(off)
Turn - On Rise Time
27
60
nS
Turn - Off Delay Time
120
250
nS
t
f
Q
g
Q
gs
Q
gd
Turn - Off Fall Time
70
150
nS
Total Gate Charge
V
= -10 V,
I
D
= -24 A, V
GS
= -5 V
25
35
nC
Gate-Source Charge
5
nC
Gate-Drain Charge
10
nC
NDP6020P Rev.C1
相關(guān)PDF資料
PDF描述
NDB6020 N-Channel Enhancement Mode Field Effect Transistor（35A,20V，0.023Ω）(N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流35A, 漏源電壓20V，導(dǎo)通電阻0.023Ω）)
NDP6020 N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor（52A,30V，0.00135Ω）(N溝道邏輯電平增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流52A, 漏源電壓30V，導(dǎo)通電阻0.0135Ω）)
NDB6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor（-30A,-30V，0.042Ω）(P溝道邏輯增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流-30A, 漏源電壓-30V，導(dǎo)通電阻0.042Ω）)
NDB6050L N-Channel Logic Level Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDP6020P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P TO-220
NDP6020P_Q 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDP6030 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDP6030L 功能描述:MOSFET N-Channel FET LL Enhancement RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDP6030PL 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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