- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363239 > NDH834P (FAIRCHILD SEMICONDUCTOR CORP) P-Channel Enhancement Mode Field Effect Transistor（-5.6A，-20V，0.035Ω）(P溝道增強型MOS場效應管（漏電流-5.6A, 漏源電壓-20V，導通電阻0.035Ω）) PDF資料下載
參數(shù)資料
| 型號： | NDH834P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor（-5.6A，-20V，0.035Ω）(P溝道增強型MOS場效應管（漏電流-5.6A, 漏源電壓-20V，導通電阻0.035Ω）) |
| 中文描述： | 5600 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 82K |
| 代理商： | NDH834P |
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 μA
V
DS
= -16 V, V
GS
= 0 V
-20
V
Zero Gate Voltage Drain Current
-1
μA
T
J
= 55
o
C
-10
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 μA
-0.4
-0.62
-1
V
T
J
= 125
o
C
-0.3
-0.4
-0.8
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -4.5 V, I
D
= -5.6 A
0.029
0.035
T
J
= 125
o
C
0.039
0.063
V
GS
= -2.7 V, I
D
= -5.2 A
V
GS
= -4.5 V, V
DS
= -5 V
V
GS
= -2.7 V, V
DS
= -5 V
V
DS
= - 5 V, I
D
= -5.6 A
0.038
0.045
I
D(on)
On-State Drain Current
-15
A
-5
g
FS
DYNAMIC CHARACTERISTICS
Forward Transconductance
18
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= -15 V, V
GS
= 0 V,
f = 1.0 MHz
1820
pF
Output Capacitance
745
pF
Reverse Transfer Capacitance
270
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Turn - On Delay Time
V
DD
= -5 V, I
D
= -1 A,
V
GEN
= -4.5 V, R
GEN
= 6
15
30
ns
Turn - On Rise Time
36
70
ns
Turn - Off Delay Time
145
280
ns
Turn - Off Fall Time
85
160
ns
Total Gate Charge
V
= -10 V,
I
D
= -5.6 A, V
GS
= -4.5 V
9.3
13
nC
Gate-Source Charge
2.3
nC
Gate-Drain Charge
1.1
nC
NDH834P Rev.C
相關PDF資料 |
PDF描述 |
|---|---|
| NDH8436 | N-Channel Enhancement Mode Field Effect Transistor |
| NDH8447 | P-Channel Enhancement Mode Field Effect Transistor |
| NDH8502P | Dual P-Channel Enhancement Mode Field Effect Transistor（-2.2A，-30V，0.11Ω）(雙P溝道增強型場效應管（漏電流-2.2A, 漏源電壓-30V，導通電阻0.11Ω）) |
| NDH8503N | Dual N-Channel Enhancement Mode Field Effect Transistor（3.8A，30V，0.0033Ω）(雙N溝道增強型場效應管（漏電流3.8A, 漏源電壓30V，導通電阻0.033Ω）) |
| NDH8504P | Dual P-Channel Enhancement Mode Field Effect Transistor（-2.7A，-30V，0.07Ω）(雙P溝道增強型場效應管（漏電流-2.7A, 漏源電壓-30V，導通電阻0.07Ω）) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NDH8436 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDH8447 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| NDH8502P | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDH8503N | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
| NDH8504P | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual P-Channel Enhancement Mode Field Effect Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復。