參數(shù)資料
型號： NDH8320C
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強型場效應(yīng)管(N溝道：漏電流3A, 漏源電壓20V，導(dǎo)通電阻0.06Ω；P溝道：漏電流-2A, 漏源電壓-20V，導(dǎo)通電阻0.13Ω）)
中文描述： 3000 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SUPERSOT-8
文件頁數(shù)： 3/8頁
文件大小： 74K
代理商： NDH8320C
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
SWITCHING CHARACTERISTICS
(Note 2)
t
D(on)
Turn - On Delay Time
N-Channel
V
DD
= 5 V, I
D
= 1 A,
V
GEN
= 4.5 V, R
GEN
= 6
P-Channel
V
DD
= -5 V, I
D
= -1 A,
V
GEN
= -4.5 V, R
GEN
= 6
N-Ch
8
15
ns
P-Ch
10
20
t
r
Turn - On Rise Time
N-Ch
25
45
ns
P-Ch
27
50
t
D(off)
Turn - Off Delay Time
N-Ch
30
55
ns
P-Ch
37
65
t
f
Turn - Off Fall Time
N-Ch
8
15
ns
P-Ch
39
75
Q
g
Total Gate Charge
N-Channel
V
= 10 V,
I
D
= 3 A, V
GS
= 4.5 V
P-Channel
V
= -10 V,
I
D
= -2 A, V
GS
= -4.5 V
N-Ch
10
15
nC
P-Ch
7.8
11
Q
gs
Gate-Source Charge
N-Ch
0.9
nC
P-Ch
1.2
Q
gd
Gate-Drain Charge
N-Ch
3.5
nC
P-Ch
1.8
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
N-Ch
0.67
A
P-Ch
-0.67
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 0.67 A
(Note2)
V
GS
= 0 V, I
S
= -0.67 A
(Note2)
N-Ch
0.7
1.2
V
P-Ch
-0.75
-1.2
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
Typical R
θ
JA
for single device operation using the board layout shown below on 4.5"x5" FR-4 PCB in a still air environment:
156
o
C/W when mounted on a 0.0025 in
2
pad of 2oz copper.
Scale 1 : 1 on letter size paper.
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
NDH8320C Rev.B
P
D
(
t
) =
T
J
T
A
R
θ
J A
(
t
)
=
T
J
T
A
R
θ
J C
+
R
θ
CA
(
t
)
=
I
D
2
(
t
)×
R
DS
(
ON
)
@
T
J
相關(guān)PDF資料
PDF描述
NDH8321C Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強型場效應(yīng)管(N溝道：漏電流3.8A, 漏源電壓20V，導(dǎo)通電阻0.035Ω；P溝道：漏電流-2.7A, 漏源電壓-20V，導(dǎo)通電阻0.07Ω）)
NDH832P P-Channel Enhancement Mode Field Effect Transistor（-4.2A，-20V，0.06Ω）(P溝道增強型MOS場效應(yīng)管（漏電流-4.2A, 漏源電壓-20V，導(dǎo)通電阻0.06Ω）)
NDH833N N-Channel Enhancement Mode Field Effect Transistor
NDH834P P-Channel Enhancement Mode Field Effect Transistor（-5.6A，-20V，0.035Ω）(P溝道增強型MOS場效應(yīng)管（漏電流-5.6A, 漏源電壓-20V，導(dǎo)通電阻0.035Ω）)
NDH8436 N-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDH8321C 功能描述:MOSFET Dual N/P Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDH832P 功能描述:MOSFET P-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDH833N 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDH834P 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDH8436 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
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