參數(shù)資料
型號(hào)： NDH8320C
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強(qiáng)型場(chǎng)效應(yīng)管(N溝道：漏電流3A, 漏源電壓20V，導(dǎo)通電阻0.06Ω；P溝道：漏電流-2A, 漏源電壓-20V，導(dǎo)通電阻0.13Ω）)
中文描述： 3000 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SUPERSOT-8
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 74K
代理商： NDH8320C
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
V
GS
= 0 V, I
D
= -250 μA
V
DS
= 16 V, V
GS
= 0 V
N-Ch
20
V
P-Ch
-20
V
I
DSS
Zero Gate Voltage Drain Current
N-Ch
1
μA
T
J
= 55
o
C
10
μA
V
DS
= -16 V, V
GS
= 0 V
P-Ch
-1
μA
T
J
= 55
o
C
-10
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
All
100
nA
Gate - Body Leakage, Reverse
All
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
N-Ch
0.4
0.7
1
V
T
J
= 125
o
C
0.3
0.45
0.7
V
DS
= V
GS
, I
D
= -250 μA
P-Ch
-0.4
-0.6
-1
T
J
= 125
o
C
-0.3
-0.42
-0.7
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 4.5 V, I
D
= 3 A
N-Ch
0.047
0.06
T
J
= 125
o
C
0.07
0.11
V
GS
= 2.7 V, I
D
= 2.6 A
V
GS
= -4.5 V, I
D
= -2 A
0.059
0.075
P-Ch
0.102
0.13
T
J
= 125
o
C
0.15
0.23
V
GS
= -2.7 V, I
D
= -1.7 A
V
GS
= 4.5 V, V
DS
= 5 V
V
GS
= 2.7 V, V
DS
= 5 V
V
GS
= -4.5 V, V
DS
= -5 V
V
GS
= -2.7 V, V
DS
= -5 V
V
DS
= 5 V, I
D
= 3 A
V
DS
= -5 V, I
D
= -2 A
0.147
0.19
I
D(on)
On-State Drain Current
N-Ch
15
A
5
P-Ch
-10
-4
g
FS
Forward Transconductance
N-Ch
10
S
P-Ch
5
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
N-Channel
V
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
P-Channel
V
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
N-Ch
415
pF
P-Ch
515
C
oss
Output Capacitance
N-Ch
220
pF
P-Ch
250
C
rss
Reverse Transfer Capacitance
N-Ch
85
pF
P-Ch
85
NDH8320C Rev.B
相關(guān)PDF資料
PDF描述
NDH8321C Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強(qiáng)型場(chǎng)效應(yīng)管(N溝道：漏電流3.8A, 漏源電壓20V，導(dǎo)通電阻0.035Ω；P溝道：漏電流-2.7A, 漏源電壓-20V，導(dǎo)通電阻0.07Ω）)
NDH832P P-Channel Enhancement Mode Field Effect Transistor（-4.2A，-20V，0.06Ω）(P溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流-4.2A, 漏源電壓-20V，導(dǎo)通電阻0.06Ω）)
NDH833N N-Channel Enhancement Mode Field Effect Transistor
NDH834P P-Channel Enhancement Mode Field Effect Transistor（-5.6A，-20V，0.035Ω）(P溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流-5.6A, 漏源電壓-20V，導(dǎo)通電阻0.035Ω）)
NDH8436 N-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDH8321C 功能描述:MOSFET Dual N/P Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDH832P 功能描述:MOSFET P-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDH833N 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDH834P 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDH8436 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
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