參數(shù)資料
型號： NDC7002
廠商： Fairchild Semiconductor Corporation
英文描述： Dual N-Channel Enhancement Mode Field Effect Transistor
中文描述： 雙N溝道增強型場效應(yīng)晶體管
文件頁數(shù)： 6/10頁
文件大小： 258K
代理商： NDC7002
NDC7002N.SAM
Typical Thermal Characteristics
0
0.2
2oz COPPER MOUNTING PAD AREA (in )
0.4
0.6
0.8
2
1
0.6
0.7
0.8
0.9
1
1.1
1.2
S
1c
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
o
0
0.025
2oz COPPER MOUNTING PAD AREA (in )
0.05
0.075
0.1
2
0.125
0.35
0.4
0.45
0.5
0.55
I
D
1c
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
V = 10V
o
Figure 13. Maximum Steady-State Drain
Current versus Copper Mounting Pad
Area.
Figure 12. SOT-6 Dual Package Maximum
Steady-State Power Dissipation versus Copper
Mounting Pad Area.
1
2
5
10
20
50
70
0.01
0.02
0.05
0.1
0.2
0.5
1
2
3
V , DRAIN-SOURCE VOLTAGE (V)
I
D
RDS(ON) LIMIT
V = 10V
SINGLE PULSE
R = See Note 1c
T = 25°C
1s
DC
100ms
100us
10ms
Figure 14. Maximum Safe Operating Area.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.01
0.02
0.05
0.1
0.2
0.5
1
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
r
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R = See Note 1c
T - T = P * R (t)
P(pk)
t
1
t
2
Figure 15. Transient Thermal Response Curve
.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
相關(guān)PDF資料
PDF描述
NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor
NDC7003P Dual P-Channel Enhancement Mode Field Effect Transistor
NDC ISOLATED RESISTOR NETWORK
NDF0610 P-Channel Enhancement Mode Field Effect Transistor（-0.18A，-60V，10Ω）(P溝道增強型MOS場效應(yīng)管（漏電流-0.18A, 漏源電壓-60V，導(dǎo)通電阻10Ω）)
NDS0610 P-Channel Enhancement Mode Field Effect Transistor（-0.12A，-60V，10Ω）(P溝道增強型MOS場效應(yīng)管（漏電流-0.12A, 漏源電壓-60V，導(dǎo)通電阻10Ω）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDC7002N 功能描述:MOSFET SO-6 N-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDC7002N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
NDC7002N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SUPERSOT-6
NDC7002N_Q 功能描述:MOSFET SO-6 N-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDC7002N_SB9G007 功能描述:MOSFET 50V DUAL N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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