參數(shù)資料
型號： NDC7002
廠商： Fairchild Semiconductor Corporation
英文描述： Dual N-Channel Enhancement Mode Field Effect Transistor
中文描述： 雙N溝道增強型場效應晶體管
文件頁數(shù)： 3/10頁
文件大?。?/td> 258K
代理商： NDC7002
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
I
SM
V
SD
Maximum Continuous Source Current
0.51
A
Maximum Pulse Source Current
(Note 2)
1.5
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 0.51 A
(Note 2)
0.8
1.2
V
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
P
D
(
t
) =
T
J
T
A
R
θ
J A
(
t
)
=
T
J
T
A
R
θ
J C
+
R
θ
CA
(
t
)
=
I
D
2
(
t
)×
R
DS
(
ON
)
T
J
Typical R
θ
JA
for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 130
o
C/W when mounted on a 0.125 in
2
pad of 2oz cpper.
b. 140
o
C/W when mounted on a 0.005 in
2
pad of 2oz cpper.
c. 180
o
C/W when mounted on a 0.0015 in
2
pad of 2oz cpper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
NDC7002N.SAM
1a
1b
1c
相關PDF資料
PDF描述
NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor
NDC7003P Dual P-Channel Enhancement Mode Field Effect Transistor
NDC ISOLATED RESISTOR NETWORK
NDF0610 P-Channel Enhancement Mode Field Effect Transistor（-0.18A，-60V，10Ω）(P溝道增強型MOS場效應管（漏電流-0.18A, 漏源電壓-60V，導通電阻10Ω）)
NDS0610 P-Channel Enhancement Mode Field Effect Transistor（-0.12A，-60V，10Ω）(P溝道增強型MOS場效應管（漏電流-0.12A, 漏源電壓-60V，導通電阻10Ω）)
相關代理商/技術參數(shù)
參數(shù)描述
NDC7002N 功能描述:MOSFET SO-6 N-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDC7002N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
NDC7002N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SUPERSOT-6
NDC7002N_Q 功能描述:MOSFET SO-6 N-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDC7002N_SB9G007 功能描述:MOSFET 50V DUAL N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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