參數(shù)資料
型號： NDC652
廠商： Fairchild Semiconductor Corporation
英文描述： P-Channel Logic Level Enhancement Mode Field Effect Transistor
中文描述： P溝道增強(qiáng)模式的邏輯電平場效應(yīng)晶體管
文件頁數(shù)： 4/10頁
文件大?。?/td> 247K
代理商： NDC652
NDC652P Rev. D1
-3
-2.5
-2
-1.5
-1
-0.5
0
-10
-8
-6
-4
-2
0
V , DRAIN-SOURCE VOLTAGE (V)
I
D
V = -10V
GS
-2.5
-6.0
-3.0
-3.5
-4.0
-4.5
-5.5
-7.0
-5.0
-10
-8
-6
-4
-2
0
0.5
1
1.5
2
2.5
I , DRAIN CURRENT (A)
D
V = -3.0V
-5.5
-6.0
-7.0
R
D
-4.0
-10
-5.0
-3.5
-4.5
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage
Typical Electrical Characteristics
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
D
V = -4.5V
I = -2.4A
R
D
-10
-8
-6
-4
-2
0
0.5
1
1.5
2
2.5
I , DRAIN CURRENT (A)
D
R
D
V = -4.5 V
TJ
25°C
-55°C
Figure 3. On-Resistance Variation
with Temperature
Figure 4. On-Resistance Variation
with Drain Current and Temperature
-6
-5
-4
-3
-2
-1
-10
-8
-6
-4
-2
0
V , GATE TO SOURCE VOLTAGE (V)
I
D
25°C
125°C
V = - 10V
TJ
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.7
0.8
0.9
1
1.1
1.2
G
I = -250μA
D
V = V
GS
V
t
Figure 5. Transfer Characteristics
Figure 6. Gate Threshold Variation
with Temperature
相關(guān)PDF資料
PDF描述
NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDC7001 Dual N & P-Channel Enhancement Mode Field Effect Transistor
NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor
NDC7002 Dual N-Channel Enhancement Mode Field Effect Transistor
NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDC652P 功能描述:MOSFET SO-6 P-CH LOGIC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDC652P_F095 功能描述:MOSFET -30V 2.4A P-CH ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDC652P_Q 功能描述:MOSFET SO-6 P-CH LOGIC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDC7001 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N & P-Channel Enhancement Mode Field Effect Transistor
NDC7001C 功能描述:MOSFET Dual N/P Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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