參數(shù)資料
型號： NDC652
廠商： Fairchild Semiconductor Corporation
英文描述： P-Channel Logic Level Enhancement Mode Field Effect Transistor
中文描述： P溝道增強模式的邏輯電平場效應(yīng)晶體管
文件頁數(shù)： 2/10頁
文件大?。?/td> 247K
代理商： NDC652
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 μA
V
DS
= -24 V, V
GS
= 0 V
-30
V
Zero Gate Voltage Drain Current
1
μA
T
J
= 55
o
C
10
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 μA
-1
-1.5
-3
V
T
J
= 125
o
C
-0.7
-1.2
-2.2
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -4.5 V, I
D
= -2.4 A
0.16
0.18
T
J
= 125
o
C
0.22
0.36
V
GS
= -10 V, I
D
= -3.1 A
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= -10 V, I
D
= -2.4 A
0.09
0.11
I
D(on)
g
FS
DYNAMIC CHARACTERISTICS
On-State Drain Current
-5
A
Forward Transconductance
3
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= -15 V, V
GS
= 0 V,
f = 1.0 MHz
290
pF
Output Capacitance
180
pF
Reverse Transfer Capacitance
60
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Turn - On Delay Time
V
DD
= -15 V, I
D
= -1 A,
V
GEN
= -4.5 V, R
GEN
= 6
13
20
ns
Turn - On Rise Time
26
35
ns
Turn - Off Delay Time
22
30
ns
Turn - Off Fall Time
19
30
ns
Total Gate Charge
V
= -15 V,
I
D
= -2.4 A, V
GS
= -10 V
10.5
20
nC
Gate-Source Charge
1.5
nC
Gate-Drain Charge
3.3
nC
NDC652P Rev. D1
相關(guān)PDF資料
PDF描述
NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDC7001 Dual N & P-Channel Enhancement Mode Field Effect Transistor
NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor
NDC7002 Dual N-Channel Enhancement Mode Field Effect Transistor
NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDC652P 功能描述:MOSFET SO-6 P-CH LOGIC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDC652P_F095 功能描述:MOSFET -30V 2.4A P-CH ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDC652P_Q 功能描述:MOSFET SO-6 P-CH LOGIC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDC7001 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N & P-Channel Enhancement Mode Field Effect Transistor
NDC7001C 功能描述:MOSFET Dual N/P Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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