參數(shù)資料
型號(hào)： NDC632P
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： 小信號(hào)晶體管
英文描述： P-Channel Logic Level Enhancement Mode Field Effect Transistor
中文描述： 2700 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SUPERSOT-6
文件頁(yè)數(shù)： 2/10頁(yè)
文件大小： 254K
代理商： NDC632P
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 μA
V
DS
= -16 V, V
GS
= 0 V
-20
V
Zero Gate Voltage Drain Current
-1
μA
T
J
= 55
o
C
-10
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 μA
-0.4
-0.7
-1
V
T
J
= 125
o
C
-0.3
-0.5
-0.8
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -4.5 V, I
D
= - 2.7 A
0.1
0.14
T
J
= 125
o
C
0.145
0.28
V
GS
= -2.7 V, I
D
= - 2.2 A
V
GS
= -4.5 V, V
DS
= -5 V
V
GS
= -2.7 V, V
DS
= -5 V
V
DS
= -10 V, I
D
= - 2.7 A
0.152
0.2
I
D(on)
On-State Drain Current
-10
A
-4
g
FS
DYNAMIC CHARACTERISTICS
Forward Transconductance
6
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
550
pF
Output Capacitance
260
pF
Reverse Transfer Capacitance
75
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Turn - On Delay Time
V
DD
= -5 V, I
D
= -1 A,
V
GEN
= -4.5 V, R
GEN
= 6
10
20
ns
Turn - On Rise Time
40
60
ns
Turn - Off Delay Time
25
40
ns
Turn - Off Fall Time
17
30
ns
Total Gate Charge
V
= -5 V,
I
D
= -2.7 A, V
GS
= -4.5 V
8.7
15
nC
Gate-Source Charge
1.7
nC
Gate-Drain Charge
1.8
nC
NDC632P Rev. B1
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDC632P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-6
NDC632P_F095 功能描述:MOSFET -20V -2.7A P-CH ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDC651N 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDC651N_F095 功能描述:MOSFET 30V 3.2A N-CH ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDC651N_Q 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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