參數(shù)資料
型號(hào): NAND256W4A2AZA6E
廠商: NUMONYX
元件分類: PROM
英文描述: 16M X 16 FLASH 3V PROM, 12000 ns, PBGA55
封裝: 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-55
文件頁數(shù): 43/58頁
文件大?。?/td> 1406K
代理商: NAND256W4A2AZA6E
DC and AC parameters
NAND128-A, NAND256-A
Figure 33.
Ready/busy load circuit
Figure 34.
Resistor value versus waveform timings for Ready/Busy signal
1.
T = 25 °C.
AI07563B
RP
VDD
VSS
RB
DEVICE
Open Drain Output
ibusy
ai07565C
tr
tf
ibusy
RP (K)
12
3
4
100
300
200
1
2
3
ibusy
(mA)
2.4
1.2
0.8
0.6
100
200
300
400
3.6
0
400
4
VDD = 3.3 V, CL = 100 pF
t r
,t
f
(ns)
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