參數(shù)資料
型號(hào): NAND04GW3C2AN6F
廠商: NUMONYX
元件分類(lèi): PROM
英文描述: 512M X 8 FLASH 3V PROM, 45 ns, PDSO48
封裝: 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
文件頁(yè)數(shù): 9/51頁(yè)
文件大?。?/td> 500K
代理商: NAND04GW3C2AN6F
NAND04GA3C2A, NAND04GW3C2A
5 Command Set
5
Command Set
All bus write operations to the device are interpreted by the Command Interface. The
Commands are input on I/O0-I/O7 and are latched on the rising edge of Write Enable when
the Command Latch Enable signal is high. Device operations are selected by writing
specific commands to the Command Register. The two-step command sequences for
program and erase operations are imposed to maximize data security.
The Commands are summarized in Table 8: Commands.
Table 8.
Commands
Command
Bus Write Operations(1)
Commands
accepted
during busy
1st CYCLE
2nd CYCLE
3rd CYCLE
4th CYCLE
Read
00h(2)
30h
Random Data Output
05h
E0h
Cache Read
00h
31h
Exit Cache Read
34h
Yes(3)
Page Program
(Sequential Input default)
80h
10h
Random Data Input
85h
Block Erase
60h
D0h
Reset
FFh
Yes
Read Electronic Signature
90h
Read Status Register
70h
Yes
1.
The bus cycles are only shown for issuing the codes. The cycles required to input the addresses or input/output data are
not shown.
2.
For consecutive read operations the 00h command does not need to be repeated.
3.
Only when a Cache Read operation is ongoing.
相關(guān)PDF資料
PDF描述
NAND512R3A2CN6E 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512R3A2CN6F 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512R3A2C 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512R4A2CN6F 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512R4A2CZA6E 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
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