參數(shù)資料
型號(hào): MX29LV640BBXBC-12
廠商: MACRONIX INTERNATIONAL CO LTD
元件分類: DRAM
英文描述: 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
中文描述: 4M X 16 FLASH 3V PROM, 120 ns, PBGA63
封裝: 11 X 12 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, PLASTIC, MO-210, CSP-63
文件頁(yè)數(shù): 63/69頁(yè)
文件大?。?/td> 519K
代理商: MX29LV640BBXBC-12
63
P/N:PM1076
REV. 1.2, SEP. 07, 2005
MX29LV640BT/BB
MIN.
MAX.
Input Voltage with respect to GND on all pins except I/O pins
-1.0V
13.5V
Input Voltage with respect to GND on all I/O pins
-1.0V
Vcc + 1.0V
Current
-100mA
+100mA
Includes all pins except Vcc. Test conditions: Vcc = 3.0V, one pin at a time.
LIMITS
TYP.(2)
0.9
45
9
11
7
50
45
PARAMETER
Sector Erase Time
Chip Erase Time
Byte Programming Time
Word Programming Time
Accelerated Word/Byte Program Time
Chip Programming Time
MIN.
MAX.
15
65
300
360
210
160
140
UNITS
sec
sec
us
us
us
sec
sec
Cycles
Byte Mode
Word Mode
Erase/Program Cycles
100,000
LATCH-UP CHARACTERISTICS
ERASE AND PROGRAMMING PERFORMANCE (1)
Note:
1. Not 100% Tested, Excludes external system level over head.
2. Typical program and erase times assume the following condition= 25
°
C,3.0V VCC.
Additionally, programming typicals assume checkerboard pattern.
Parameter Symbol
CIN
COUT
CIN2
Parameter Description
Input Capacitance
Output Capacitance
Control Pin Capacitance
Test Set
VIN=0
VOUT=0
VIN=0
TYP
6
8.5
7.5
MAX
7.5
12
9
UNIT
pF
pF
pF
TSOP PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA=25
°
C, f=1.0MHz
相關(guān)PDF資料
PDF描述
MX29LV640BTC-12 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640BTC-12G 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640BTC-90 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640BTC-90G 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640BTI-12 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
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