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參數(shù)資料
| 型號： | MX29LV640BTI-12 |
| 廠商： | MACRONIX INTERNATIONAL CO LTD |
| 元件分類： | DRAM |
| 英文描述： | 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| 中文描述： | 4M X 16 FLASH 3V PROM, 120 ns, PDSO48 |
| 封裝： | 12 X 20 MM, PLASTIC, MO-142, TSOP1-48 |
| 文件頁數(shù)： | 1/70頁 |
| 文件大?。?/td> | 1188K |
| 代理商： | MX29LV640BTI-12 |
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1
P/N:PM0920
REV. 1.2, NOV. 05, 2003
MX29LV640T/B
64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY
FLASH MEMORY
FEATURES
GENERAL FEATURES
Single Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program opera-
tions
8,388,608 x 8 / 4,194,304 x 16 switchable
Sector structure
- 8KB (4KW) x 8 and 64KB(32KW) x 127
Sector Protection/Chip Unprotect
- Provides sector group protect function to prevent
program or erase operation in the protected sector
group
- Provides chip unprotect function to allow code
changes
- Provides temporary sector group unprotect function
for code changes in previously protected sector groups
Secured Silicon Sector
- Provides a 128-word area for code or data that can
be permanently protected.
- Once this sector is protected, it is prohibited to pro-
gram or erase within the sector again.
Latch-up protected to 250mA from -1V to Vcc + 1V
Low Vcc write inhibit is equal to or less than 1.5V
Compatible with JEDEC standard
- Pin-out and software compatible to single power sup-
ply Flash
PERFORMANCE
High Performance
- Fast access time: 90/120ns
- Fast program time: 11us/word, 45s/chip (typical)
- Fast erase time: 0.9s/sector, 45s/chip (typical)
Low Power Consumption
- Low active read current: 10mA (typical) at 5MHz
- Low standby current: 0.2uA (typ.)
Minimum 100,000 erase/program cycle
20-year data retention
SOFTWARE FEATURES
Support Common Flash Interface (CFI)
- Flash device parameters stored on the device and
provide the host system to access.
Erase Suspend/ Erase Resume
- Suspends sector erase operation to read data from
or program data to another sector which is not being
erased
Status Reply
- Data polling & Toggle bits provide detection of pro-
gram and erase operation completion
HARDWARE FEATURES
Ready/Busy (RY/BY) Output
- Provides a hardware method of detecting program
and erase operation completion
Hardware Reset (RESET) Input
- Provides a hardware method to reset the internal
state machine to read mode
WP Pin
- Write protect (WP) function allows protection of two
outermost boot sectors, regardless of sector protect
status
PACKAGE
48-pin TSOP
63-ball CSP
64-ball Easy BGA
GENERAL DESCRIPTION
The MX29LV640T/B is a 64-mega bit Flash memory or-
ganized as 8M bytes of 8 bits or 4M bytes of 16 bits.
MXIC's Flash memories offer the most cost-effective and
reliable read/write non-volatile random access memory.
The MX29LV640T/B is packaged in 48-pin TSOP, 63-
ball CSP and 64-ball Easy BGA. It is designed to be
reprogrammed and erased in system or in standard
EPROM programmers.
The standard MX29LV640T/B offers access time as fast
as 90ns, allowing operation of high-speed microproces-
sors without wait states. To eliminate bus contention,
the MX29LV640T/B has separate chip enable (CE) and
output enable (OE) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MX29LV640BTI-12G | 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| MX29LV640BTI-90 | 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| MX29LV640TXBI-12 | 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| MX29LV640TXBI-90 | 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| MX29LV640TXCC-12 | 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MX29LV640EBTI-70G | 功能描述:IC FLASH PAR 3V 64MB 70NS 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:MX29LV 標準包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6 |
| MX29LV640EBXEI-70G | 功能描述:IC FLASH PAR 64MB 70NS 48FBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:MX29LV 標準包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6 |
| MX29LV640EBXEI-70GTR | 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 64 Mb (8M x 8/4M x 16) 70 ns Parallel Flash - TFBGA-48 |
| MX29LV640EBXEI-90G | 制造商:Macronix International Co Ltd 功能描述:MX29LV Series 3 V 64 Mb (8M x 8/4M x 16) 90 ns Parallel Flash - TFBGA-48 |
| MX29LV640ETTI-70G | 功能描述:IC FLASH PAR 3V 64MB 70NS 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:MX29LV 標準包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6 |
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